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Photonic crystal and photonic wire technology, materials and devices

机译:光子晶体和光子线技术,材料和设备

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Light channeling and other structures that exploit strong optical confinement are an essential requirement for the realisation of high-density photonic integrated circuits. Strong confinement and controlled feedback are also important for efficient and compact sources for light with various levels of coherence and directionality. The presentation will survey work on various planar photonic crystal and wire device structures realised both in material systems providing strong vertical confinement (e.g. S-o-I) and in systems with weak vertical confinement such as typical epitaxial III-V semiconductor heterostructures. Work towards the combination of a number of elements into a single photonic IC will be highlighted, as will structures which combine photonic crystal and photonic wire features. Planar microcavities for frequency selection will be featured, in particular. We shall also resurvey briefly the technology aspects of fabrication, including electron-beam lithography (EBL), reactive ion etching (RIE), focused ion-beam etching (FIBS) and excimer laser lithography. Finally we shall consider techniques for the growth of self-organised photonic crystals with greater perfection and better controlled orientation.
机译:利用强光学限制的光通道和其他结构是实现高密度光子集成电路的必要要求。强大的监禁和受控反馈对于具有各种相干性和方向性的光的高效和紧凑的来源也很重要。介绍将对各种平面的光子晶体和线装置结构进行调查,其在材料系统中实现,提供强大的垂直限制(例如S-O-I)和具有弱垂直限制的系统,例如典型的外延III-V半导体异质结构。将突出地突出多个元件的组合,将突出显示光子晶体和光子线特征的结构。特别是频率选择的平面微腔。我们还应简要介绍制造的技术方面,包括电子束光刻(EBL),反应离子蚀刻(RIE),聚焦离子束蚀刻(FIB)和准分子激光光刻。最后,我们应考虑具有更大完美和更好的控制方向的自组织光子晶体的生长技术。

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