Amorphous GaN: Optoelectronic properties and device potential

机译：非晶GaN：光电性能和器件电势

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper describes the preparation of an amorphous form of hetero-polar tetrahedrally bonded GaN by ion-assisted deposition. The structure, including composition and bonding configurations, has been subjected to thorough investigation to establish the optimum deposition conditions. The optoelectronic properties of the best films have been measured to evaluate their potential in UV-blue detectors and/or emitters. Currently the best films have shown clear photoconductivity, with sensitivity peaking in the UV, but no useful luminescence has yet been found.

机译：本文通过离子辅助沉积描述了制备无定形形式的杂体四束键合GaN。该结构包括组成和粘合配置，已经进行了彻底的研究，以建立最佳沉积条件。已经测量了最佳薄膜的光电性能以评估其在紫外线探测器和/或发射器中的潜力。目前，最好的薄膜已经显示出明显的光电导，UV中的敏感性达到峰，但尚未发现有用的发光。

著录项

来源
《Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on》|2003年|p.198-200|共3页
会议地点
作者
Trodahl; H.J.; Ruck; B.J.; Koo; A.; Lanke; U.D.; Bittar; A.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词
gallium compounds; III-V semiconductors; amorphous semiconductors; wide band gap semiconductors; semiconductor thin films; semiconductor growth; ion beam assisted deposition; photoconductivity; photoluminescence; amorphous GaN; optoelectronic properties;

机译：镓化合物; III-V族半导体;非晶态半导体;宽带隙半导体;半导体薄膜;半导体生长;离子束辅助沉积;光电导;光致发光;非晶态GaN;光电性能;

相似文献

外文文献
中文文献
专利

1. Effect of Annealing on the Properties of Indium-Tin-Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices [J] . Marcel Himmerlich, Maria Koufaki, Gemot Ecke ACS applied materials & interfaces . 2009,第7期

机译：退火对铟锡氧氮化物薄膜作为GaN基光电器件的欧姆接触的性能的影响
2. Mechanical properties of amorphous indium-gallium-zinc oxide thin films on compliant substrates for flexible optoelectronic devices [J] . Mohammed D. W., Waddingham R., Flewitt A. J., Thin Solid Films . 2015,第NOVa2PTaA期

机译：柔性光电器件柔性基板上非晶铟镓锌氧化锌薄膜的机械性能
3. Structural and optoelectronic properties of amorphous GaN thin films [J] . Al-Zouhbi A, Al-Din NS Optical review . 2008,第5期

机译：非晶GaN薄膜的结构和光电特性
4. Amorphous GaN: Optoelectronic Properties and Device Potential [C] . H. J. Trodahl, B. J. Ruck, A. Koo, International Conference on Transparent Optical Networks . 2003

机译：无定形GaN：光电性能和器件电位
5. THE EFFECT OF DEPOSITION CONDITIONS ON THE STRUCTURAL, OPTOELECTRONIC AND DEVICE PROPERTIES OF HYDROGENATED AMORPHOUS SILICON AND SILICON-GERMANIUM ALLOYS (SOLAR CELL, THIN FILM TRANSISTORS). [D] . YAN, PHILIP YU. 1987

机译：沉积条件对氢化非晶硅和硅锗合金（太阳能电池，薄膜晶体管）的结构，光电和器件性能的影响。
6. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications [O] . B. Mitchell, D. Timmerman, J. Poplawsky, -1

机译：在掺Eu（RE）的GaN中利用天然氧以实现光电子应用中的器件兼容性
7. Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices [O] . Mohammed, DW, Waddingham, R, Flewitt, Andrew John, 2015

机译：柔性光电器件顺应性基板上非晶铟-镓-氧化锌薄膜的机械性能

Amorphous GaN: Optoelectronic properties and device potential

摘要

著录项

相似文献

相关主题

期刊订阅