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首页> 外文会议>Power electronics technology exhibition conference >Fairchild New NPT 2 IGBT Opens Door for a New Era in UPS, Motor Driveand SMPS Market
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Fairchild New NPT 2 IGBT Opens Door for a New Era in UPS, Motor Driveand SMPS Market

机译：飞兆半导体的新型NPT 2 IGBT开启了UPS，电机驱动和SMPS市场新时代的大门

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A new high speed generation NPT2 IGBT is presented for Motor Drive, UPS, IH(Induction Heating) and Switched Mode Power Supply market. The power supply market ishighly driven by high speed power devices and is presently dominated by MOSFET. Therequirement for an IGBT operating in Uninterruptible Power Supply (UPS) application ismoderately high speed switching. In Contrast, Motor Drive applications need low conductionloss and moderate switching speed devices. Some of these applications need good short circuitwithstand time (SCWT). The relationship between Rdson and BVdss of a MOSFET is defined by apower curve proportional to the power of 2.5. The Rdson of 1000-1200V MOSFETs becomesvery high so conduction loss of these MOSFETs is very high. In some topologies where ZVS(zero voltage switching) or ZCS (zero current switching) is utilized the conduction losses areimportant. This translates into a larger MOSFET die size and higher switch cost. The NPT2IGBT turn-off switching losses are 40% lower than other IGBTs and the conduction loss werereduced drastically compared to MOSFETs and IGBTs, especially at high junction temperature.By reducing the overall losses over other 1200V IGBTs and regular 1000 and 1200 voltsMOSFETs, Fairchild’s new high speed NPT2 IGBT is a more cost effective solution forapplications such as UPS, Motor Drive, IH as well as SMPS market. By implementing the NPT2IGBT for these applications the efficiency can be increased and improvements in other trade-offssuch as cost reduction, size reduction, or increase in power density can be realized.
机译：推出了适用于电机驱动，UPS，IH的新一代高速NPT2 IGBT （感应加热）和开关模式电源市场。电源市场是 由高速功率器件驱动，目前主要由MOSFET主导。这 在不间断电源（UPS）应用中运行的IGBT的要求是 适度的高速切换。相反，电动机驱动器应用需要低导通 损耗和中等开关速度的设备。其中一些应用需要良好的短路 耐受时间（SCWT）。 MOSFET的Rdson与BVdss之间的关系由 功率曲线与2.5的功率成正比。 1000-1200V MOSFET的Rdson变为 这些MOSFET的导通损耗非常高。在某些ZVS拓扑中 （零电压开关）或ZCS（零电流开关）被利用的传导损耗是 重要的。这意味着更大的MOSFET管芯尺寸和更高的开关成本。 《不扩散核武器条约》 2 IGBT关断开关损耗比其他IGBT低40％，导通损耗为 与MOSFET和IGBT相比大大降低，尤其是在高结温的情况下。 通过降低与其他1200V IGBT和常规1000V和1200V电压相比的总损耗 MOSFET，飞兆半导体的新型高速NPT2 IGBT是一种更具成本效益的解决方案，适用于 应用，例如UPS，电机驱动器，IH以及SMPS市场。通过实施《不扩散核武器条约》 2 这些应用中的IGBT可以提高效率并在其他折衷方案中进行改进 诸如成本降低，尺寸减小或功率密度的增加等的实现可以被实现。

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