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首页> 外文会议>MRS spring meeting >Interaction Between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers
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Interaction Between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers

机译：重组增强位错滑移过程激活的基底堆积断层与4H碳化硅外延层中的螺纹位错之间的相互作用

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摘要

Electron-hole recombination enhanced glide of Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations in 4H silicon carbide epitaxial layers have been studied using synchrotron white beam X-ray topography and in situ electroluminescence. The mobile silicon-core Shockley partial dislocations bounding the stacking faults are able to cut through threading edge dislocations leaving no trailing dislocation segments in their wake. However, when the Shockley partial dislocations interact with threading screw dislocations, trailing 30° partial dislocation dipoles are initially deposited in their wake due to the pinning effect of the threading screw dislocations. These dipoles spontaneously snap into their screw orientation, regardless the normally immobile carbon-core Shockley partial dislocation components in the dipoles. The subsequent cross slip and annihilation of screw oriented Shockley partial dipole leave a prismatic stacking fault in (2-1-10) plane with the displacement vector 1/3[01-10]. The formation of such prismatic stacking fault is energetically favorable, reducing the strain energy by one to two orders of magnitude.
机译：利用同步加速器白光X射线形貌和原位电致发光研究了4H碳化硅外延层中电子空穴复合增强的Shockley部分位错的滑动，这些位错限制了扩展的堆叠断层及其与螺纹位错的相互作用。限制堆垛层错的移动硅芯肖克利局部位错能够切穿螺纹边缘位错，在其尾部不留尾随位错段。然而，当肖克利局部位错与螺纹螺钉位错相互作用时，由于螺纹螺钉位错的钉扎效应，尾随的30°局部位错偶极子最初会在其尾流中沉积。无论偶极子中通常不动的碳核Shockley部分位错组件如何，这些偶极子都会自发地陷入其螺钉方向。随后的螺旋定向肖克利局部偶极子的交叉滑移和hil灭在位移矢量为1/3的情况下在（2-1-10）平面中留下棱柱形的堆叠断层 [01-10]。这种棱柱形堆垛层错的形成在能量上是有利的，从而将应变能降低了一个到两个数量级。

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