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首页> 外文会议>2007亚洲显示国际会议 >Photoreflectance and Photoluminescence Study of High Nitrogen Content GaInNAs/GaAs Single Quantum Well for 1.55 μm Applications
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Photoreflectance and Photoluminescence Study of High Nitrogen Content GaInNAs/GaAs Single Quantum Well for 1.55 μm Applications

机译：高氮含量GaInNAs / GaAs单量子阱在1.55μm应用中的光反射和光致发光研究

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The optical properties of Ga069 In0,31 NxAs,1-x/GaAs single quantum well (SQW) structures have been studied using photoreflectance (PR) and photoluminescence (PL) measurements. In the PR spectra of single quantum well (SQW) samples, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the quantum well (QW) region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. The temperature dependence of the exciton transition energies have been studied in terms of both the Varshni and Bose-Einstein equations. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the mterband transitions. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The spectral features of these samples showed red shift with increasing N composition x. Another consequence of N-incorporation is the severe degradation of the crystal quality as evidenced by a significant increase in the temperature independent broadening parameter. In addition, introducing N into the system also resulted in an increase in the built-in electric field as determined from the observed FKOs above the GaAs band edge which tends to increase the overlap integrals of the higher excited states as well as partially screening out the modulating external field on the localized states at low temperature. The anomalous behavior of the temperature dependence of the PL peak energy and the full width at half maximum (FWHM) can be understood as a result of competition between the delocalized states and the localized states induced by N-incorporation.
机译：Ga069 In0,31 NxAs，1-x / GaAs单量子阱（SQW）结构的光学性质已通过光反射（PR）和光致发光（PL）测量进行了研究。在单量子阱（SQW）样品的PR光谱中，已经观察到GaAs能带边缘上方清晰的Franz-Keldysh振荡（FKO）和源自量子阱（QW）区域的各种激子跃迁。 SQW中的内置电场是根据FKO确定的，并发现随着N浓度的增加而增加。已经发现，由于载流子定位引起的调制效率减弱，温度降低时，掺氮样品的PR信号降低。激子跃迁能量的温度依赖性已经根据Varshni方程和Bose-Einstein方程进行了研究。温度相关性分析产生有关描述跨频带跃迁的温度变化的参数的信息。 PL光谱中观察到的与温度有关的异常11H跃迁能和线宽已被解释为源自氮结合导致的局部态。这些样品的光谱特征显示出随着N组成x的增加红移。 N掺入的另一个结果是晶体质量的严重降低，这与温度无关的增宽参数的显着增加所证明。此外，将N引入系统还导致内建电场的增加，这是由GaAs频带边缘上方观察到的FKO所确定的，这往往会增加高激发态的重叠积分，并部分地屏蔽掉高能态的重叠积分。在低温下在局部状态上调制外部场。 PL峰能量与半峰全宽（FWHM）的温度相关性的异常行为可以理解为是由于N结合引起的离域态与局域态之间竞争的结果。

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