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首页> 外文会议>2007亚洲显示国际会议 >Improved Performance of Organic Light-emitting Devices by Inserting Ultra-thin Hole-blocking Layers both in Hole-transporting Layer and Electron-transporting Layer
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Improved Performance of Organic Light-emitting Devices by Inserting Ultra-thin Hole-blocking Layers both in Hole-transporting Layer and Electron-transporting Layer

机译：通过在空穴传输层和电子传输层中插入超薄空穴阻挡层来改善有机发光器件的性能

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摘要

Tris-(8-hydroxyqunoline) aluminum (Alq3)-based organic light-emitting devices (OLEDs) using different thickness of 2, 9-Diraethyl-4, 7-diphenyl-1, 110-phenanthorline (BCP) as hole-blocking layer inserted both in electron-transporting layer and hole-transporting layers have been fabricated. The devices have a configuration of indium tin oxide (ITO)/ m-MTDATA (80 nm)/BCP (X nm)/NPB (20 nm)/Alq3(40 nm)/BCP (X nm)/Alq3(60 nm)/Mg:Ag (200 nm), where m-MTDATA is4, 4', 4"-Tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine, which is used to improve hole injection, and NPB is N, N'-Di (naphth-2-yl) -N, N'-diphenyl-benzidine. X is changed from 0 to 2 nm. For device with optimal thickness of 1 nm BCP, Current efficiency and power efficiency were significantly improved by 47% and 43% , respectively, compared to the standard device without BCP layer. The improved efficiencies should be due to well balance the electron and hole injection, exciton formation and confinement within the luminescent region.
机译：Tris-（8-羟基喹啉）铝（ALQ3）基于不同厚度为2,9-DiOla乙基-4,7-二苯基-1,1110-菲林（BCP）的有机发光器件（OLED）作为空穴阻挡层在电子传输层和空穴传输层中插入两者均未制造。该装置具有氧化铟锡（ITO）/ M-MTDATA（80nm）/ BCP（X NM）/ NPB（20nm）/ Alq3（40nm）/ bcp（x nm）/ alq3（60nm）的构造/ mg：Ag（200nm），其中M-mtdata is4,4'，4' - 三苯胺（N-3-甲基苯基-n-苯基 - 氨基）三苯胺，用于改善空穴注射，NPB为n， n'-di（萘二甲）-n，n'-二苯基 - 苯并丁丁。x从0变为2 nm。对于最佳厚度为1nm的设备，电流效率和功率效率明显提高47与没有BCP层的标准装置相比分别为％和43％。改善的效率应该是由于井平衡电子和空穴注入，激子形成和在发光区域内的限制。

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