The physical and electrical characteristics of La_2O_3 and LaAlO_3 films, deposited by atomic layer deposition (ALD) and using a new La formamidinate precursor (La-FAMD), were investigated. The La-FAMD precursor has superior thermal stability and is also the most volatile La source available today. The vapor pressure of La-FAMD, maintained at 100 °C, is approximately 60 times higher than the commercial available source La-THD (THD = tetramethylheptanedionate).
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