• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>The 10th International Conference on Ferrites（2008中国国际铁氧体研讨会）论文集 >The Preservation Time of Rapid Thermal Annealing Effect on the Loss of Bi:YIG Film in Terahertz Regime
【24h】

The Preservation Time of Rapid Thermal Annealing Effect on the Loss of Bi:YIG Film in Terahertz Regime

机译：太赫兹条件下快速热退火效应对Bi：YIG薄膜损失的保留时间

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The Bi:YIG target was sintered at 950°C for 3 h after molding wafer with diameter of 110 mm and thickness of 5 mm. The film was deposited by radio frequency rnagnetron sputtering method in the JGP-500 and crystallized by rapid thermal annealing in the AG4100. Temperature rapidly reach 700°C with a relatively high rate (30°C/s), preserve heat at 20s, 90s, 00s and 600s respectively. Those samples measured by Terahertz Time Domain Spectroscopy, the results shows that the least loss sample is that preservation time is 300s. The result shows that the preservation heat time play an important role in the loss of Bi:YIG film in terahertz regime.
机译：在成型直径为110 mm，厚度为5 mm的晶片之后，将Bi：YIG靶材在950°C的温度下烧结3小时。该膜是通过射频纳涅tron溅射方法在JGP-500中沉积的，并在AG4100中通过快速热退火使其结晶的。温度以相对较高的速率（30°C / s）迅速达到700°C，分别将热量保存在20s，90s，00s和600s。通过太赫兹时域光谱仪测量的样品，结果表明，损失最小的样品是保存时间为300s。结果表明，在太赫兹状态下，保温时间对Bi：YIG薄膜的损耗起着重要作用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号