首页> 外文会议>The 10th International Conference on Ferrites(2008中国国际铁氧体研讨会)论文集 >The Effect of Al-Si and Al Underlayers on Sr-ferrite Sputtered Films
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The Effect of Al-Si and Al Underlayers on Sr-ferrite Sputtered Films

机译:Al-Si和Al底层对Sr铁氧体溅射膜的影响

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Strontium ferrite (SrM) thin films have been deposited on silicon wafer with AI and Al-Si underlayer by using magnetron sputtering system. The obvious peak for strontium ferrite films with (107) orientation deposited on Al-Si and Al underlayers can be observed when substrate temperature is higher than 550 and 575 °C, respectively. The saturation magnetization, perpendicular and in-plane coercivities and perpendicular squareness ratio for both of Al-Si and Al underlayers increase with increasing substrate temperature. The maximum of coercivity and remanent squareness ratio in perpendicular direction are 6.4 kOe and 0.7, respectively, at substrate temperature of 600 °C.
机译:利用磁控溅射系统,在具有AI和Al-Si底层的硅晶片上沉积了锶铁氧体(SrM)薄膜。当衬底温度分别高于550和575°C时,可以观察到(107)取向锶铁氧体薄膜在Al-Si和Al底层上沉积的明显峰。 Al-Si和Al底层的饱和磁化强度,垂直和面内矫顽力以及垂直矩形比随衬底温度的升高而增加。在衬底温度为600°C时,垂直方向的矫顽力和剩余矩形比的最大值分别为6.4 kOe和0.7。

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