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PHASE DIAGRAM CALCULATION OF GaN1-xPx TERNARY ALLOYS WITH A CONTENT GRADUAL CHANGE MODEL

机译:含含量梯度变化模型的GaN1-xPx三元合金的相图计算

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There exists a large miscibility gap in GaN1-xPx ternary system,which results in that the phase separation occurs easily and hence limits the development of the material system.So it is very important to clarify the unstable and stable-mixing regions of this material system.Usually,a theoretical calculation of the solid interaction parameter and the miscibility gap are performed tbr the GaN1-xPx ternary alloy system using the delta-lattice-parameter model and the strictly regular solution model,respectively.In the reference [1],the effects of mismatch strain and elastic parameter on the miscibility are taken into account in order to predict the immiscibility region of GaN1-xPx more reliable.In this paper,a new content gradual change model (CGCM) is used to calculate phase diagram and predict the immiscibility region of GaN1-xPx.
机译:GaN1-XPX三元系中存在大的混溶性差距,从而可以轻松地发生相位分离,因此限制了材料系统的开发。所以阐明该材料系统的不稳定和稳定混合区域非常重要。同时,使用Delta-Lattice-参数模型和严格的常规解决方案模型分别执行固体交互参数的理论计算和误差间隙。在参考文献[1],不匹配应变和弹性参数对溶解性的影响,以便预测GaN1-XPX的不混溶区域更可靠。在本文中,新内容逐渐变化模型(CGCM)用于计算相图并预测GaN1-XPX的不用区域。

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