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首页> 外文会议>ASME summer bioengineering conference;SBC2009 >DEVELOPMENT OF A BRIDGE-MICROCANTILEVER BY CMOS PROCESS FOR SURFACE STRESS MEASUREMENT
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DEVELOPMENT OF A BRIDGE-MICROCANTILEVER BY CMOS PROCESS FOR SURFACE STRESS MEASUREMENT

机译：用CMOS工艺开发桥式微悬臂梁进行表面应力测量。

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摘要

The four-layer piezoresistive microcantilever is shown ineffective to measure the bixial surface stress and vulnerable for the biochemical sample to the high temperature induced by piezoresistor during sensor operation. A bridge-microcantilever design compatible with standard CMOS process is developed to improve the surface stress sensitivity by converting the surface stress loading into a concentrated force loading. The bridge-microcantilever is composed of an immobilized cantilever, a sensing cantilever, and a connecting transmitter. The biaxial surface stress is limited to the immobilized cantilever while the piezoresistive strain in the sensing cantilever becomes mainly uniaxial. The surface stress sensitivity can also be effectively improved by shortening the sensing cantilever to the length ratio around 0.6. The transmitter of torsion bar design is shown preferable to highermeasurement sensitivity. Furthermore, the immobilized layer remains at constant temperature because the piezoresistor is isolated on the sensing cantilever. Implementation on a sensor chip by TSMC standard CMOS process is currently under way.
机译：该四层压阻式微悬臂梁无法有效地测量轴的表面应力，并且在传感器操作过程中，对于生化样品而言，其易受压敏电阻引起的高温的影响。开发了与标准CMOS工艺兼容的电桥微悬臂梁设计，以通过将表面应力负荷转换为集中力负荷来提高表面应力敏感性。桥式微悬臂梁由固定悬臂梁，传感悬臂梁和连接的发射器组成。双轴表面应力仅限于固定的悬臂，而传感悬臂中的压阻应变主要变为单轴。通过将感测悬臂缩短到大约0.6的长度比，也可以有效地提高表面应力敏感性。扭杆设计的发射器显示为优于更高 测量灵敏度。此外，由于压敏电阻在传感悬臂上隔离，因此固定层保持恒温。目前正在通过台积电（TSMC）标准CMOS工艺在传感器芯片上实施。

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