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首页> 外文会议>2010 International Symposium on Computer Communication Control and Automation >Design and simulation of a CMOS-MEMS gyroscope with a low-noise sensing circuit
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Design and simulation of a CMOS-MEMS gyroscope with a low-noise sensing circuit

机译：具有低噪声感测电路的CMOS-MEMS陀螺仪的设计与仿真

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A design and simulation of z-axis dual-mass CMOS-MEMS gyroscope with a low-noise capacitance sensing circuit has been presented in this paper. A gyroscope chip which implemented by the TSMC 2P4M 0.35 μm CMOS-MEMS process was proposed in this design. The associated post process was designed. For the z-axis dual-mass CMOS-MEMS gyroscope, the fully differential low-noise capacitive sensing circuit has been designed and discussed. This capacitance sensing circuit can reach the performance of low-noise by modulating the noise signal to high frequency band and then the noise would be filtered. Finally, we obtained the output noise of 9 nV/√Hz and the residual noise of 0.1 mV by using HSPICE simulation. However, the sensitivity of 0.476 mV/°/s and system noise of 0.063 mV/√Hz of the gyroscope system was obtained.
机译：本文提出了具有低噪声电容感应电路的z轴双质量CMOS-MEMS陀螺仪的设计和仿真。本设计中提出了一种采用台积电2P4M 0.35μmCMOS-MEMS工艺实现的陀螺仪芯片。设计了相关的后期处理。对于z轴双质量CMOS-MEMS陀螺仪，已经设计并讨论了全差分低噪声电容式感应电路。通过将噪声信号调制到高频带，该电容感测电路可以达到低噪声的性能，然后对噪声进行滤波。最后，通过HSPICE仿真获得了9 nV /√Hz的输出噪声和0.1 mV的残留噪声。但是，陀螺仪系统的灵敏度为0.476 mV /°/ s，系统噪声为0.063 mV /√Hz。

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