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Scaling issues for p-i-n carbon nanotube FETs: A computational study

机译:p-i-n碳纳米管FET的定标问题:计算研究

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Scaling study of p-i-n carbon nanotube field effect transistors (CNTFETs) is presented through numerical simulations based on a quantum-mechanical simulator. This simulator is based on a self-consistent solution of Poisson's equation and the carrier transport equation. Finite element method is used for solving Poisson's equation while the non-equilibrium Green's function (NEGF) formalism is used to model the carrier transport. The developed simulator is used to investigate the effects of the device parameters on the device performance.
机译:通过基于量子力学模拟器的数值模拟,提出了对p-i-n碳纳米管场效应晶体管(CNTFET)的定标研究。该模拟器基于泊松方程和载流子传输方程的自洽解。有限元方法用于求解泊松方程,而非平衡格林函数(NEGF)形式则用于对载流子传输进行建模。开发的仿真器用于调查设备参数对设备性能的影响。

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