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首页> 外文会议>2010 IEEE 26th Convention of Electrical and Electronics Engineers in Israel >Integrated Zener diode for gate protection and voltage sourcing in integrated power management platforms
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Integrated Zener diode for gate protection and voltage sourcing in integrated power management platforms

机译：集成齐纳二极管，用于集成电源管理平台中的栅极保护和电压源

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摘要

We describe a Zener diode integrated in a 0.18 micron based 60V Power Management Process platform. By adding one ion implant layer, a buried diode with a sharp reverse breakdown current slope is implemented. A steep rise in reverse current, from 10−8 A to 10−3 A is obtained at the breakdown region, over less then 100mV voltage variation. The buried interface has shown no breakdown voltage shifts under prolonged stress measurements at current densities exceeding 2mA/um⁁2, shifts which were clearly observed in surface diodes. By varying the implant dose the reverse breakdown voltage — Vz, can be tuned from 4.5V to 7.5V. Consequently the diode is adequate for voltage sourcing applications and gate protection of the 5V gates utilized by the LDMOS devices in the Power Management Process.
机译：我们描述了集成在基于0.18微米的60V电源管理过程平台中的齐纳二极管。通过增加一层离子注入层，可以实现具有急剧反向击穿电流斜率的埋入式二极管。在击穿区域，电压变化小于100mV时，反向电流从10 -8 A急剧上升到10 -3 A。在电流密度超过2mA /um⁁2的长时间应力测量下，埋入式界面未显示击穿电压漂移，这种漂移在表面二极管中可以清楚地观察到。通过改变注入剂量，可以将反向击穿电压Vz从4.5V调整到7.5V。因此，该二极管足以满足电压源应用和LDMOS器件在电源管理过程中使用的5V栅极的栅极保护要求。

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