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首页> 外文会议>NSTI nanotechnology conference and expo;Nanotech conference expo;NSTI-Nanotech 2011;TechConnect world annual conference expo >Compact Isomorphic Modeling of Rectangular Gate and Trigate MOSFETs
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Compact Isomorphic Modeling of Rectangular Gate and Trigate MOSFETs

机译：矩形栅极和三栅极MOSFET的紧凑同构建模

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摘要

A compact analytical model is presented for the 3D electrostatics of rectangular and trigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson's equation (above threshold), where suitable 2D isomorphic functions are utilized to describe the potential distributions in the cross sections perpendicular to the source-drain axis. To account for short-channel effects, additional functional forms are used near source and drain. High precision is made possible by utilizing auxiliary boundary conditions obtained from a conformal mapping analysis. Based on the electrostatics, the drain current can be calculated in the full range of bias voltages. The model compares well with numerical calculations obtained from the ATLAS device simulator.
机译：提出了一种用于矩形和三栅极MOSFET的3D静电的紧凑分析模型。该模型基于3D Laplace方程（低于阈值）和Poisson方程（高于阈值）的解，其中使用了合适的2D同构函数来描述垂直于源漏轴的横截面中的电势分布。为了解决短通道效应，在源极和漏极附近使用了其他功能形式。通过利用从共形映射分析获得的辅助边界条件，可以实现高精度。基于静电，可以在整个偏置电压范围内计算出漏极电流。该模型与从ATLAS设备模拟器获得的数值计算结果很好地进行了比较。

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