Usage Of Porous Indium Phosphide As Substrate For Indium Nitride Films

机译：多孔磷化铟作为氮化铟薄膜基材的用途

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In this paper the possibility of obtaining thin InN films on porous TnP substrates by radical-beam gettering epitaxy is considered. Porous InP was prepared by electrochemical etching. The formation of films of InN on the surface of porous InP was proved by Auger spectroscopy.

机译：在本文中，考虑了通过自由基束吸气外延在多孔TnP衬底上获得InN薄膜的可能性。通过电化学蚀刻制备多孔InP。通过俄歇光谱法证实了在多孔InP表面上形成InN膜。

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《Meeting of the Electrochemical Society;Symposium on nanotechnology general session》|2011年|p.73-77|共5页
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Y.A. Suchikova; V.V. Kidalov; A.A. Konovalenko; G.A. Sukach;
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中图分类电化学工业;
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1. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy [J] . T. Yodo, T. Nakamura, T. Kouyama, Physica Status Solidi. C, Conferences and critical reviews . 2005,第7期

机译：电子回旋共振等离子体辅助分子束外延对Si（111）衬底上生长的六角形InN晶体薄膜中残余氧杂质，立方氧化铟晶粒和氮氧化铟合金晶粒的影响
2. Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers [J] . Journal of Applied Physics . 1983,第2期

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3. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007,第1期

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4. Usage Of Porous Indium Phosphide As Substrate For Indium Nitride Films [C] . Y. A. Suchikova, V. V. Kidalov, A. A. Konovalenko, ECS Meeting . 2011

机译：用于氮化铟膜的多孔铟磷化物作为基材的用途
5. Indium gallium arsenide phosphide/indium phosphide 1.3 micron double heterostructure laser grown on silicon substrate by metalorganic vapor phase epitaxy [D] . Mobarhan, Kamran S. 1994

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6. Formation of Indium-Doped Zinc Oxide Thin Films Using Ultrasonic Spray Pyrolysis: The Importance of the Water Content in the Aerosol Solution and the Substrate Temperature for Enhancing Electrical Transport [O] . Rajesh Biswal, Luis Castañeda, Rosario Moctezuma, 2012

机译：超声喷雾热解法形成铟掺杂氧化锌薄膜的研究：气溶胶溶液中水分的含量和基质温度对提高电迁移的重要性
7. Electrodeposition of high-purity indium thin films and its application to indium phosphide solar cells [O] . Lobaccaro Peter, Raygani Anahit, Oriani Andrea, 2014

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8. Thin Polycrystalline Films of Indium Phosphide on Low-Cost Substrates. Final Report, September 30, 1976-March 31, 1978 [R] . Ruth, R. P., Dapkus, P. D., Manasevit, H. M., 1978

机译：低成本衬底上的磷化铟薄多晶薄膜。最终报告，1976年9月30日至1978年3月31日

Usage Of Porous Indium Phosphide As Substrate For Indium Nitride Films

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