Raman scattering studies on Mn-doped GaN grown by metal organic chemical vapor deposition

机译：金属有机化学气相沉积法生长Mn掺杂GaN的拉曼散射研究

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Mn-doped GaN epitaxial films were grown by metal organic chemical vapor deposition (MOCVD). Appropriate growth conditions for the growth of high quality films were established by studying Raman scattering spectra of Mn-doped GaN films. And then at the optimal growth conditions, Mn-dopants levels were increased for the growth of heavily Mn-doped GaN films. We found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1(LO) of films is broadened and shifts towards lower frequency. The possible reason derives from the different bonding strength between Ga-N pairs and Mn-N pairs in the host lattice. In addition, electronic property of Mn-doped GaN was studied. We found that the electronic property of GaN-based DMSs can be adjusted by p- and/or n-dopants.

机译：通过金属有机化学气相沉积（MOCVD）生长Mn掺杂的GaN外延膜。通过研究Mn掺杂GaN薄膜的拉曼散射光谱，建立了适合于高质量薄膜生长的生长条件。然后，在最佳生长条件下，对于重掺杂Mn的GaN薄膜的生长，Mn掺杂剂的含量会增加。我们发现，随着Mn掺杂剂含量的增加，薄膜的纵向光学声子模A 1 （LO）变宽并向低频移动。可能的原因是由于主晶格中Ga-N对和Mn-N对之间的键合强度不同所致。另外，研究了Mn掺杂GaN的电子性能。我们发现，可以通过p型和/或n型掺杂剂来调整GaN基DMS的电子性能。

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《2011 International Conference on Materials for Renewable Energy Environment》|2011年|p.1773-1778|共6页
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Cui X. G.;
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MOCVD; Mn-doped GaN; Raman Scattering;

机译：MOCVD; Mn掺杂的GaN;拉曼散射;

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2. Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition [J] . Zhe Chuan Feng, Matthew Schurman, Richard A. Stall Applied optics . 1997,第13a15期

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3. Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition [J] . Feng ZC, Schurman M, Stall RA, Applied optics . 1997,第13期

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4. Raman scattering studies on Mn-doped GaN grown by metal organic chemical vapor deposition [C] . Cui X. G. International Conference on Materials for Renewable Energy and Environment . 2011

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Raman scattering studies on Mn-doped GaN grown by metal organic chemical vapor deposition

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