Characterization and modeling of self-heating effect on transient current overshoot in poly-Si TFTs fabricated on glass substrate

机译：在玻璃基板上制造的多晶硅TFT中自热效应对瞬态电流过冲的影响和建模

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Characteristics of transient drain current overshoot in poly-Si TFTs are measured, and an equivalent thermal circuit model is proposed based on the experimental results. By changing the terminals on which a step voltage is applied, two main mechanisms causing the transient current, i.e., the electron trapping effect and the self-heating effect, can be separately evaluated. Using this new technique, we discuss the heat conduction mechanisms in TFTs responsible for describing the transient current overshoot component induced by the self-heating effect.

机译：测量了多晶硅TFT中的瞬态漏极电流过冲的特性，并基于实验结果提出了等效的热电路模型。通过改变施加阶跃电压的端子，可以分别评估引起瞬态电流的两个主要机理，即电子俘获效应和自热效应。使用这项新技术，我们讨论了TFT中的热传导机制，这些热传导机制负责描述由自热效应引起的瞬态电流过冲分量。

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《2011 International Conference on Simulation of Semiconductor Processes and Devices》|2011年|p.255-258|共4页
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Ota Toshifumi; Tsuji Hiroshi; Kamakura Yoshinari; Taniguchi Kenji;
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正文语种
中图分类半导体器件制造工艺及设备;
关键词
Heat Conduction Model; Overshoot Current; Poly-Si TFT; Self-Heating Effect;

机译：导热模型;过冲电流; Poly-Si TFT;自热效应;

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专利

1. Deposition of device grade poly-Si films on glass substrate directly at 450 degrees C and fabrication of bottom-gate poly-Si TFTs [J] . Lim C, Lee JW, Hanna J Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2008,第19a25期

机译：直接在450摄氏度下在玻璃基板上沉积器件级多晶硅膜并制造底栅多晶硅TFT
2. Self-Heating Effects in p-Channel Polysilicon TFTs Fabricated on Different Substrates [J] . G. FORTUNATO, M. CUSCUNA, P. GAUCCI, Journal of the Korean Physical Society . 2009,第1aPta2期

机译：在不同基板上制造的p沟道多晶硅TFT中的自热效应
3. Self-Heating Effects in p-Channel Polysilicon TFTs Fabricated on Different Substrates [J] . Fortunato G, Cuscuna M, Gaucci P, Journal of the Korean Physical Society . 2009,第1期

机译：在不同基板上制造的p沟道多晶硅TFT中的自热效应
4. Characterization and modeling of self-heating effect on transient current overshoot in poly-Si TFTs fabricated on glass substrate [C] . Ota Toshifumi, Tsuji Hiroshi, Kamakura Yoshinari, International Conference on Simulation of Semiconductor Processes and Devices . 2011

机译：玻璃基材制造的多丝TFT瞬态电流过冲的自热效应的特征及建模
5. Nonlinear glass waveguide devices fabricated by femtosecond laser writing with thermal poling and waveguide modeling for silver ion exchange in glass. [D] . Li, Guangyu. 2006

机译：通过飞秒激光写入，热极化和波导建模制造的非线性玻璃波导器件，用于玻璃中的银离子交换。
6. AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature [O] . Kyohei Nakamura, Atsushi Kobayashi, Kohei Ueno, -1

机译：室温下在玻璃基板上制造的AlN / InAlN薄膜晶体管
7. Floating-body and Self-heating Effects Characterization of poly-Si TFTs through AC Output Conductance Measurement [O] . Takatori Kenichi, Hideki Asada, Setsuo Kaneko 2007

机译：通过交流输出电导测量，浮体和自热效应Poly-Si TFT的表征

Characterization and modeling of self-heating effect on transient current overshoot in poly-Si TFTs fabricated on glass substrate

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