Insulated-Gate Integrated III-Nitride RF Switches

机译：绝缘门集成式III氮化物射频开关

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Monolithically integrated microwave switches based on insulated gate transistors benefit from extremely small leakage currents crucially important for large-periphery devices. Composite fast/slow gate design and nonlinearity compensation technique allow the insulated gate switches to achieving superior performance compared to existing RF switch types.

机译：基于绝缘栅晶体管的单片集成微波开关受益于极小的泄漏电流，这对于大型外围设备至关重要。与现有的RF开关类型相比，复合式快速/慢速栅极设计和非线性补偿技术可使绝缘栅极开关实现卓越的性能。

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《2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011》|2011年|p.1-4|共4页
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Gaska R.; Yang J.; Billingsley D.; Khan B.; Simin G.; Wong H. Y.; Braga N.; Hu X.; Deng J.; Shur M.; Mickevicius R.;
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专利

1. Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design [J] . Sattu A. K., Yang J., Gaska R., Microwave and Wireless Components Letters, IEEE . 2011,第6期

机译：具有快速/慢速混合门设计的III型氮化物射频开关的小信号和大信号性能
2. First-order, switched-capacitor, low-pass filter implemented with GaAs insulated-gate FET switches [J] . Luck J., Swanson J.G. Electronics Letters . 1990,第22期

机译：用GaAs绝缘栅FET开关实现的一阶开关电容器低通滤波器
3. Performance of integrated optical switches based on 2D materials and beyond [J] . Yao Yuhan, Cheng Zhao, Dong Jianji, Frontiers of optoelectronics . 2020,第2期

机译：基于2D材料及超越的集成光开关的性能
4. Insulated-Gate Integrated III-Nitride RF Switches [C] . Gaska R., Yang J., Billingsley D., IEEE Compound Semiconductor Integrated Circuits Symposium . 2011

机译：绝缘栅极集成III族氮化物RF开关
5. High-performance gateless III-nitride microwave switches. [D] . Wang, Jingbo. 2010

机译：高性能无栅极III氮化物微波开关。
6. SiNx/(AlGa)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy [O] . Ł. Janicki, H. Li, S. Keller, -1

机译：通过调制光谱研究N极III型氮化物晶体管结构中的SiNx /（AlGa）N界面势垒
7. Transistor performance of top rough surface of pentacene measured by laminated double insulated-gate supported on a poly(dimethylsiloxanes) base structure [O] . Ling Mang-mang, Bao Zhenan, Li Dawen 2006

机译：由聚（二甲基硅氧烷）基础结构支撑的层压双绝缘栅测得的并五苯顶部粗糙表面的晶体管性能
8. Versatile bistable optical switches and latching optical logic using integrated photothyristors and surface-emitting lasers. [R] . P. Zhou J. Cheng C. F. Schaus S. Z. Sun D. R. Myers 1991

机译：多功能双稳态光学开关和锁存光学逻辑，使用集成的光电晶体管和表面发射激光器。

Insulated-Gate Integrated III-Nitride RF Switches

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