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Wilkinson splitter design for LTE applications based on Hi-Q silicon technology

机译:基于Hi-Q硅技术的LTE应用的Wilkinson分离器设计

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This paper presents a new design of a small integrated passive device (IPD) — Wilkinson splitter — for China TD-LTE band application. The splitter was designed and simulated in On-Semi Hi-Q technology and was realized in similar CMOS process. Measurement results agree quite well with simulation. This new type of splitter has a very small size and a much smaller thickness than its counterpart using LTCC design.
机译:本文提出了一种针对中国TD-LTE频段应用的小型集成无源器件(IPD)的新设计-威尔金森分离器。该分离器采用On-Semi Hi-Q技术进行设计和仿真,并以类似的CMOS工艺实现。测量结果与仿真非常吻合。与使用LTCC设计的同类产品相比,这种新型的拆分器具有非常小的尺寸和更小的厚度。

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