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首页> 外文会议>2011 International Conference on Materials for Renewable Energy Environment >Influence of crystal growth rate on the thermal field in a directional solidification process for silicon solar cells
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Influence of crystal growth rate on the thermal field in a directional solidification process for silicon solar cells

机译：硅太阳能电池定向凝固过程中晶体生长速率对热场的影响

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A global model of heat transfer, including the melt convection, the argon flow, the thermal conduction, the thermal radiation and phase change in a directional solidification furnace for multi-crystalline silicon ingot for solar cells was developed. Basing on the model, transient global simulations were carried out to study the influence of crystal growth rate on the global thermal field, the melt convection and the melt-crystal interface shape in a directional solidification process. The growth rate was controlled by the heater power supplying history in different processes. Three processes, namely, the slow-cooling process, the fast-cooling process and the medium-cooling process, were numerically investigated and compared. It was found that the growth rate significantly influences the global thermal field, the silicon melt flow pattern and the melt-crystal interface shape in a directional solidification process. If the growth rate is not appropriate, the solidification process may not proceed smoothly and high thermal stress may be induced in the grown crystal. The numerical results indicate the importance of appropriate design of the process parameters to control the thermal field in a solidification furnace for high quality silicon ingots.
机译：建立了用于太阳能电池用多晶硅锭的定向凝固炉中的熔体对流，氩气流动，热传导，热辐射和相变的整体传热模型。基于该模型，进行了瞬态全局模拟，研究了定向凝固过程中晶体生长速率对整体热场，熔体对流和熔体-晶体界面形状的影响。增长率受不同过程中加热器供电历史的控制。对慢冷却，快冷却和中冷却三个过程进行了数值研究和比较。发现在定向凝固过程中，生长速率显着影响整体热场，硅熔体流动模式和熔体-晶体界面形状。如果生长速率不合适，则固化过程可能无法顺利进行，并且可能在生长的晶体中引发高热应力。数值结果表明，适当设计工艺参数以控制用于高品质硅锭的凝固炉中的热场的重要性。

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