Femtosecond three-pulse photon echo and transient grating studies of the yellow band of GaN

著录项

• 来源
  《Conference on Optoelectronic and Microelectronic Materials and Devices》|2002年||共4页
• 会议地点
• 作者

  Van Dao L.; Lowe M.; Hannaford P.;

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• 作者单位

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• 会议组织
• 原文格式 PDF
• 正文语种
• 中图分类 TN2-53;
• 关键词

  high-speed optical techniques; photon echo; visible spectra; gallium compounds; III-V semiconductors; nonlinear optics; impurity states; electron traps; femtosecond three-pulse photon echo; transient grating studies; yellow band; femtosecond three-pulse two-colour photon echo measurements; optical nonlinearity; free induction decay; population grating; probe wavelength; pump wavelength; spectrally resolved measurements; energy relaxation properties; phase properties; light emission; shallow donors; deep acceptors; carriers trapping; 20 ps; GaN;

  机译：高速光学技术;光子回声;可见光谱;镓化合物;III-V半导体;非线性光学;杂质状态;电子陷阱;飞秒三脉冲光子回声;瞬态光栅研究;黄色乐队;FemtoSecond三脉冲两种 光子回声测量;光学非线性;自由诱导衰变;人口光栅;探针波长;泵波长;光谱解析的测量;能量松弛特性;相位属性;光发射;浅捐赠者;载体捕获;20 ps;甘;