首页> 外文会议>IEEE International Electron Devices Meeting >Footprint-efficient and power-saving monolithic IoT 3D+ IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8

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Footprint-efficient and power-saving monolithic IoT 3D+ IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8

机译：由BEOL兼容的Sub-10nm高纵横比（AR> 7）由较高离子为0.38 mA /μm的单粒细胞，尺寸高纵横比（AR> 7）和65 MV / Dec陡峭的旋转型尺寸Si FinFet构建的占用型号和省电的单片IOT 3D + IC 。和8的离子/ ioff比例为8

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A footprint-efficient and power-saving BEOL compatible 3D+IC carrying monolithic 3D stackable FinFETs (3D+ FinFETs) and W interconnect were demonstrated by low thermal budget laser spike anneal technology (Tsub7) 3D+ FinFETs exhibit steep subthreshold swing (S.S.~65mV/dec.), record high driving current (I on per WEff (WEff=2HFin+WFin): 386 μA/μm (n-type) and 352μA/μm (p-type)), and high Ion/Ioff (>107), envisioning next generation low-cost heterogeneously integrated IoTs and wearable electronics.

机译：通过低热预算激光尖峰退火技术（Tsub7）3D + Finfets展示了一种占用单片3D可叠加的FINFET（3D + FINFET）和W互连的占用单片3D可叠加的FINFET（3D + FINFET）和W互连展示陡峭的亚脚下摆动（SS〜65MV / DEC 。），记录高驱动电流（I ON PERFF（WEFF = 2HFIN + WFIN）：386μA/μm（n型）和352μA/μm（p型），以及高离子/ IOFF（> 107），设想下一代低成本非渗透集成IOT和可穿戴电子设备。

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《IEEE International Electron Devices Meeting》|2016年|1 v.|共4页
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Chih-Chao Yang; Jia-Min Shieh; Tung-Ying Hsieh; Wen-Hsien Huang; Hsing-Hsiang Wang; Chang-Hong Shen; Fu-Kuo Hsueh; Ping-Yi Hsieh; Meng-Chyi Wu; Wen-Kuan Yeh;
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中图分类自动化装置与设备;
关键词
three-dimensional integrated circuits; elemental semiconductors; integrated circuit interconnections; laser beam annealing; MOSFET circuits; silicon; sputter etching; thermal management (packaging);

机译：三维集成电路;元素半导体;集成电路互连;激光束退火;MOSFET电路;硅;溅射蚀刻;热管理（包装）;

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机译：源自PS-PDMS嵌段共聚物图案的高纵横比致密堆积15至10nm以下硅特征的低温等离子体蚀刻
2. DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration [J] . Deshpande V., Djara V., OConnor E., Solid-State Electronics . 2017,第FEBa期

机译：通过3D单片集成制造的SiGe-OI FinFET上InGaAs替代金属栅极（RMG）nFET的DC和RF表征
3. Making use of semiconductor manufacturing process variations: FinFET-based physical unclonable functions for efficient security integration in the IoT [J] . Yanambaka Venkata P., Mohanty Saraju P., Kougianos Elias Analog Integrated Circuits and Signal Processing . 2017,第3期

机译：利用半导体制造过程变化：基于FinFET的物理不可渗透功能，可用于IOT中有效的安全集成
4. Footprint-efficient and power-saving monolithic IoT 3D+ IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8 [C] . Chih-Chao Yang, Jia-Min Shieh, Tung-Ying Hsieh, IEEE International Electron Devices Meeting . 2016

机译：高效节能的单片IoT 3D + IC由BEOL兼容的低于10nm的高长宽比（AR> 7）单晶粒Si FinFET构成，具有创纪录的0.38 mA /μm的高离子和65 mV / dec的陡摆。离子/离子比率为8
5. Correction of aspect ratio dependency in deep silicon etch using SF6/C4F8/Ar gas mixture. [D] . Bates, Robert Lee. 2014

机译：校正使用SF6 / C4F8 / Ar气体混合物进行深硅蚀刻时的长宽比依赖性。
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Footprint-efficient and power-saving monolithic IoT 3D+ IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8

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