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首页> 外文会议>IEEE International Electron Devices Meeting >Bifacial CIGS (11 efficiency)/Si solar cells by Cd-free and sodium-free green process integrated with CIGS TFTs
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Bifacial CIGS (11 efficiency)/Si solar cells by Cd-free and sodium-free green process integrated with CIGS TFTs

机译：通过无镉和无钠的绿色工艺与CIGS TFT集成的无镉和无钠绿色工艺的双相CIGS（11％效率）/ Si太阳能电池

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摘要

CuInGaSe2 (CIGS) thin-film has successfully grown at low temperature 400 °C for bifacial solar cells and TFTs without degrading the silicon solar cell on the other side. The efficiency of CIGS solar cells reached 6.3% and 11% at 400 and 500 °C, respectively, by sodium-free and Cd-free (n-type ZnS buffer layer used) green technologies. Texturing technique has been introduced here on Si not only to relieve the sodium-free impact on CIGS-crystallization but also to enhance the adhesion between CIGS solar cells and underneath substrate. CIGS TFTs are reported first time and revealed a record-high hole-mobility of 0.22 cm2/V-s. Hybrid CIGS solar cells/TFTs are uniformly formed on 6″ wafers, simultaneously powered with silicon solar cells.
机译：Cuingase 2 （CIGS）薄膜在低温400℃下成功生长，对于双面太阳能电池和TFT，而不会在另一侧降解硅太阳能电池。 CIGS太阳能电池的效率分别通过无钠和无酰胺（使用N型ZnS缓冲层）绿色技术在400和500℃下达到6.3％和11％。本文介绍了SI的纹理技术，不仅可以缓解对CIGS结晶的无钠的影响，而且还可以增强CIGS太阳能电池和基材下方的粘附性。报告了CIGS TFT首次，并揭示了0.22cm 2 / V-s的记录高空穴迁移率。杂交CIGS太阳能电池/ TFT在6“晶片上均匀地形成，同时用硅太阳能电池供电。

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