A novel 1T2UMTJ toggle MRAM with high read/write bandwidth interface

机译：一个小说1T2umtj用高读/写带宽接口切换MRAM

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A novel one-transistor-and-two-uneven-magnetic tunneling junctions (1T2UMTJ) cell with toggle switching mode is proposed to increase the packing density and to secure the writing selectivity. Besides, a four-state sense amplifier is proposed to reduce the read access time to less than 25 ns for two accessing data in one cycle. With adequate I/O stages, the 1T2UMTJ toggle MRAM architecture has a double word length or alternatively has a high read/write bandwidth. The two-bit data can be read from or written into a selected memory cell of 1T2UMTJ toggle MRAM within one clock cycle, therefore, demonstrating the promising property of high bandwidth processing capability.

机译：提出了一种具有肘节开关模式的新颖的单晶电阻和 - 双磁隧道连接件（1T2umtj）电池，以增加填充密度并确保写入选择性。此外，建议在一个周期中将读取访问时间降低到两个访问数据的读取访问时间为小于25 ns。具有足够的I / O阶段，1T2umtj切换MRAM架构具有双字长度，或者具有高读/写带宽。因此，可以从一个时钟周期中读取或写入1T2UMTJ的所选存储单元中的两个比特数据，从而读取一个时钟周期，因此展示了高带宽处理能力的有希望的特性。

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《International Symposium on VLSI Technology, Systems and Applications》|2007年||共2页
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Wang M.C.; Tsai J.R.; Hung C.C.; Chen Y.S.; Chang C.P.; Lin C.S.; Wang C.C.; Su K.L.; Lee Y.J.; Wang D.Y.; Shen K.H.; Tsai M.-J.; Kao M.J.;
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1. Hybrid Multiplexing (HYM) for Read- and Area-Optimized MRAMs With Separate Read-Write Paths [J] . Ahmedullah Aziz, Sumeet Kumar Gupta IEEE transactions on nanotechnology . 2016,第3期

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2. Area and Energy Efficient Series Multilevel Cell STT-MRAMs for Optimized Read–Write Operations [J] . Sanjay Prajapati, Brajesh Kumar Kaushik IEEE Transactions on Magnetics . 2019,第1期

机译：面积和能源效率高的串联多级单元STT-MRAM，用于优化读写操作
3. A 4-Mb 0.18-/spl mu/m 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers [J] . Andre T.W., Nahas J.J., Subramanian C.K., IEEE Journal of Solid-State Circuits . 2005,第1期

机译：具有均衡的三输入感应方案和本地镜像单向写入驱动器的4-Mb 0.18- / spl mu / m 1T1MTJ触发MRAM
4. A novel 1T2UMTJ toggle MRAM with high read/write bandwidth interface [C] . Wang, M.C., Tsai, . 2007

机译：具有高读写带宽接口的新型1T2UMTJ触发MRAM
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7. Reduction of Write Field with Enhanced Write Margin in Toggle MRAMs Using Induced Spin-flop Mode [O] . Y. Fukumoto, C. Igarashi, T. Suzuki 2007

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8. Low Cost Writeable RFID Tag With MRAM Memory [R] . Beech, R. S. 1998

机译：具有mRam存储器的低成本可写RFID标签

A novel 1T2UMTJ toggle MRAM with high read/write bandwidth interface

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