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Points-Over-Threshold Statistics for Post-Retention Read Disturb Reliability in 3D NAND Flash

机译：保留后保留后阈值统计信息读取干扰可靠性3D NAND闪存

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The 3D NAND Flash memories are known to be the preferred storage media in Solid State Drives applications both for consumer and enterprise scenario. Modeling their reliability in different working corners is a mandatory task for the deployment of system-level management routines that do not compromise the performance and reliability of the drive. Dedicated parametric statistical models have been developed so far to capture the evolution of the memory reliability, although limiting the description to an average behavior rather than extreme cases that can disrupt the drive’s functionality. In this work, for the first time we employ an extreme statistics tool, namely the Points-Over-Threshold method, to characterize the post-retention read disturb reliability of a 3D NAND Flash chip. Such technique proved that the die reliability characterized through extreme events analysis can be predicted using a low number of samples and generally holds good prediction features for distribution tails events.
机译：已知3D NAND闪存记忆是固态的首选存储介质驱动器应用于消费者和企业场景的应用。在不同的工作角落中建模他们的可靠性是部署系统级管理例程的强制性任务，这些程序不会影响驱动器的性能和可靠性。已经开发了专用的参数统计模型，迄今已经开发了捕获内存可靠性的演变，尽管将描述限制为平均行为而不是可能破坏驱动器功能的极端情况。在这项工作中，我们第一次采用极端统计工具，即点阈值方法，以表征3D NAND闪存芯片的保留后读干扰可靠性。这种技术证明，可以使用少量样本来预测通过极端事件分析的模具可靠性，并且通常可以保持用于分配尾部事件的良好预测特征。

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