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Recent Developments of ZnO-Based p-type Transparent Conductive Oxide Thin Films

机译：ZnO基p型透明导电氧化物薄膜的最新进展

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Nowadays, high performance p-type transparent conductive oxide (TCO) thin films have gained tremendous intersts, and the fact is that if p-type TCOs with high electrical conductivity and optical transmittance can be fabricated, transparent p-n junctions can be obtained and "invisible electronics" be realized, and hence the use area of TCOs will be highly broadened. A lot of work have been done on non-stoichiometric and doped versions of p-type TCOs in the last few years to improve the optical and electrical properties by various deposition techniques. ZnO-based thin films were thought to be the most promising candidate for p-type TCOs based on the fact that ZnO has advantages over the others, so in this paper the development of ZnO-based p-type TCOs has been discussed. Firstly, the reasons why p-type ZnO-based TCOs are difficult to synthesize were discussed, and then the general ways now used to produce p-type ZnO-based TCOs were summerized, including intrinsic p-type ZnO, doping of group I elements, codoping of Ⅴand Ⅲ elements, doping of group Ⅴ elements, the origin of p-type conductivity and the feasibility of each way, and the state-of-the-art optical and electrical properties were presented. Finally, the specific shortcomings in producing high quality p-type TCOs were discussed. Based on the comparision, it is believed that the doping of group I elements in ZnO may be the most pronising way in realizing p-type TCO.
机译：如今，高性能的p型透明导电氧化物（TCO）薄膜获得了巨大的利益，事实是，如果能够制造出具有高导电性和透光性的p型TCO，则可以获得透明的pn结，并且“不可见”电子”的实现，因此TCO的使用范围将大大拓宽。过去几年中，已经对p型TCO的非化学计量和掺杂形式进行了大量工作，以通过各种沉积技术改善光学和电学性质。基于ZnO优于其他薄膜的事实，认为ZnO基薄膜是最有希望的p型TCO候选材料，因此本文讨论了ZnO基p型TCO的开发。首先讨论了p型ZnO基TCO难以合成的原因，然后总结了目前用于生产p型ZnO基TCO的一般方法，包括内在的p型ZnO，掺杂I族元素介绍了Ⅴ和Ⅲ元素的共掺杂，Ⅴ族元素的掺杂，p型导电性的起源和每种方法的可行性，以及最新的光电性能。最后，讨论了生产高质量p型TCO的具体缺点。基于该比较，认为在ZnO中掺杂I族元素可能是实现p型TCO的最有意义的方式。

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