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Phase Preservation Study on ArF Mask For Haze-free Mask Resist Strip and Cleaning

机译：ArF面膜用于无雾面膜抗蚀剂剥离和清洗的相保存研究

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Ozonated water, as an alternative solution to a Sulfuric removal- Peroxide Mixture (SPM), was introduced to the resist strip and cleaning processes to prevent surface haze formation through the elimination of sulfuric acid from these processes. However, it also was found to cause significant change of optical characteristics and CD-linewidth shift on ArF6% attenuation phase shift masks (AttPSM). Although the use of 172nm UV light irradiation treatment was reported before the clean process could improve the CD shifts, after several clean cycles, this phase/CD preservation effect would be dramatically degraded. In this paper, a novel approach of phase and CD preservation by using dry treatments based on reactive plasma Asher as part of acid-free resist strip or cleaning process is introduced. We have investigated on the surface material integrity and CD stability of Mosi based shifters and compared with the approach of 172nm UV light irradiation treatment, and tried to illustrate and explained the principle. Both Asher process and UV irradiation can activate oxidization process on Mosi based shifter of ArF AttPSM masks, and created passivation layer that can resist for wet cleaning; furthermore, plasma Asher process is in prior to UV irradiation. As shown in Cross-section profiles on the masks without and with Asher process, although the deference is very limited, it may be proved that a thin passivation layer was created on the surface and side of Mosi based shifter after Asher process.
机译：将臭氧水作为脱硫-过氧化物混合物（SPM）的替代解决方案，引入抗蚀剂剥离和清洁工艺中，以通过从这些工艺中消除硫酸来防止表面形成雾霾。但是，还发现它在ArF6％衰减相移掩模（AttPSM）上引起光学特性和CD线宽偏移的显着变化。尽管在清洁过程可以改善CD偏移之前已经报道了使用172nm紫外光辐照处理，但是经过几次清洁循环后，该阶段/ CD的保存效果会大大降低。本文介绍了一种通过使用基于反应性等离子体Asher的干燥处理作为无酸抗蚀剂剥离或清洁工艺的一部分来进行相和CD保存的新方法。我们研究了基于Mosi的移位器的表面材料完整性和CD稳定性，并与172nm紫外光辐照处理方法进行了比较，并试图说明和解释其原理。 Asher工艺和UV辐射均可以在基于Mosi的ArF AttPSM掩模移位器上激活氧化工艺，并形成可以抵抗湿法清洁的钝化层。此外，等离子体灰化工艺是在紫外线照射之前。如不使用Asher工艺和使用Asher工艺的掩模的截面轮廓所示，尽管偏差非常有限，但可以证明在Asher工艺之后，基于Mosi的移位器的表面和侧面均形成了一层薄钝化层。

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