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Radiation hardened memory development at Honeywell

机译：凉爽在霍尼韦尔的内存开发

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Deep submicron Silicon on Insulator (SOI) technology advancements at Honeywell have enabled new generations of radiation hard memory products. This paper will cover plans and results of our SOI technology development programs for SRAM products and Giant Magneto Resistive (GMR) non-volatile memory.

机译：霍尼韦尔的绝缘体（SOI）技术进步的深亚亚微米硅已经启用了新的辐射硬存储器产品。本文将介绍我们SRAM产品和巨型磁电阻（GMR）非易失性记忆的SOI技术开发计划的计划和结果。

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《IEEE Aerospace Conference》|2001年||共7页
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Hassan Kaakani;
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中图分类 V1-53;
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1. Development of microstructure and irradiation hardening of Zircaloy during low dose neutron irradiation at nominally 377–440 °C [J] . B.V. Cockeram, K.J. Leonard, T.S. Byun, Journal of Nuclear Materials: Materials Aspects of Fission and Fusion . 2014,第1a3期

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2. Development of microstructure and irradiation hardening of Zircaloy during low dose neutron irradiation at nominally 358 °c [J] . Cockeram B.V., Smith R.W., Leonard K.J., Journal of Nuclear Materials: Materials Aspects of Fission and Fusion . 2011,第1a3期

机译：低剂量中子在标称358°c辐照下Zircaloy的显微组织和辐照硬化的发展
3. Microstructural development and irradiation hardening of W and W-(3-26) wt% Re alloys after high-temperature neutron irradiation to 0.15 dpa [J] . He JC, Tang GY, Hasegawa A, Nuclear fusion . 2006,第11期

机译：W和W-（3-26）wt％Re合金在中子辐照至0.15 dpa后的显微组织发展和辐照硬化
4. Radiation hardened memory development at Honeywell [C] . Kaakani, H. . 2001

机译：霍尼韦尔（中国）的辐射硬化存储器开发
5. Radiation-hardened-by-design area-efficient all NMOS memory design. [D] . Kim, Jung Eui. 2007

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6. Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad [O] . Changyeop Lee, Gyuseong Cho, Troy Unruh, 2020

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7. Development of MOS Transistors for Radiation-Hardened Large Scale Integrated Circuits and Analysis of Radiation-Induced Degradation [O] . Hiroshi KAMIMURA, Shinichi YOSHIOKA, Masatsugu AKIYAMA, 1994

机译：辐射硬化大规模集成电路MOS晶体管的研制及辐射诱导降解分析

Radiation hardened memory development at Honeywell

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