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首页> 外文会议>IEEE International Conference on Industrial Technology >The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE
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The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE

机译：SPICE下碳化硅功率MOSFET的直流行为电热模型

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摘要

This paper presents a new behavioural electrothermal model of power Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) under SPICE. This model is based on the MOSFET model level 1of SPICE, in which phenomena such as Drain Leakage Current I, On-State Resistance R, gate Threshold voltage V, the transconductance (gfs), I-V Characteristics Body diode, temperature-dependent and self-heating are included and represented using behavioural blocks ABM (Analog Behavioural Models) of Spice library. This ultimately makes this model flexible and easily can be integrated into the various Spice-based simulation softwares. The internal junction temperature of the component is calculated on the basis of the thermal model through the electric power dissipated inside and its thermal impedance in the form of the localized Foster canonical network. The model parameters are extracted from manufacturers' data (curves data sheets) using polynomial interpolation with the method of simulated annealing (S A) and weighted least squares (WLS). This model takes into account the various important phenomena within transistor. The effectiveness of the presented model has been verified by Spice simulation results and as well as by data measurement for SiC MOSFET transistor C2M0025120D CREE (1200V, 90A).
机译：本文介绍了在SPICE下功率碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）的新行为电热模型。该模型基于SPICE的MOSFET模型级别1，其中存在诸如漏电流I，通态电阻R，栅极阈值电压V，跨导（gfs），IV特性的现象体二极管，温度相关和自包括并使用Spice库的行为块ABM（模拟行为模型）表示加热。这最终使该模型变得灵活，并且可以轻松地集成到各种基于Spice的仿真软件中。组件的内部结温是根据热模型通过内部耗散的功率及其局部Foster规范网络形式的热阻计算得出的。使用多项式插值，通过模拟退火（S A）和加权最小二乘（WLS）的方法，从制造商的数据（曲线数据表）中提取模型参数。该模型考虑了晶体管内的各种重要现象。该模型的有效性已通过Spice仿真结果以及SiC MOSFET晶体管C2M0025120D CREE（1200V，90A）的数据测量得到了验证。

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