Electron concentration behavior in junctionless vs junction SOI n-MOSFET transistor

机译：无结与结SOI n-MOSFET晶体管中的电子浓度行为

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In this paper, the effect of gate workfunction variation on electron concentration at depletion and inversion as a function of applied gate voltage for 100 nm gate length silicon-on-insulator (SOI) junctionless (JLT) and junction (JT) transistors are investigated. It shows that the JLT device is properly function and achieving full-depletion without losing gate controllability at higher gate workfunction of more than 5.0 eV whereas the designated JT device is more wider range, ranging from low, mid-gap or high workfunction.

机译：在本文中，研究了栅极功函数变化对耗尽和反转时电子浓度随100 nm栅极长度绝缘体上无结（JLT）和结（JT）晶体管施加的栅极电压的影响。它表明，在大于5.0 eV的较高栅极功函数下，JLT器件可以正常工作并实现全耗尽而不会失去栅极可控性，而指定的JT器件的范围更广，范围从低，中间隙或高功函数。

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《IEEE Regional Symposium on Micro and Nano Electronics》|2015年|1-4|共4页
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Huda A.R.N.; Arshad M.K.Md; Othman Noraini; Voon C.H.; Ayub R.M.; Gopinath Subash C.B.; Foo K.L.; Ruslinda A.R.; Hashim U.; Lee H.Cheun; Adelyn P.Y.P.; Kahar S.M.;
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Color; Doping; Junctions; Logic gates; Numerical models; Performance evaluation; Transistors; junction transistor (JT); junctionless transistor (JLT); metal oxide semiconductor field effect transistor (MOSFET); silicon-on-insulator (SOI);

机译：颜色;掺杂交界处;逻辑门数值模型;绩效评估;晶体管;结型晶体管（JT）;无结晶体管（JLT）;金属氧化物半导体场效应晶体管（MOSFET）;绝缘体上硅（SOI）;

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3. Temperature dependence of electronic behaviors in n-type multiple-channel junctionless transistors [J] . Ma Liuhong, Han Weihua, Wang Hao, Journal of Applied Physics . 2013,第12期

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4. Electron concentration behavior in junctionless vs junction SOI n-MOSFET transistor [C] . Huda A.R.N., Arshad M.K.Md, Othman Noraini, IEEE Regional Symposium on Micro and Nano Electronics . 2015

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6. Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor [O] . Ya-Chi Cheng, Hung-Bin Chen, Ming-Hung Han, 2014

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7. Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor [O] . Ya-Chi Cheng, Hung-Bin Chen, Ming-Hung Han, 2014

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Electron concentration behavior in junctionless vs junction SOI n-MOSFET transistor

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