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Strong blue light emission from Eu-doped SiOC prepared by magnetron sputtering

机译:磁控溅射法制备的Eu掺杂SiOC发出的强烈蓝光

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The Eu-doped SiOC films were prepared by magnetron sputtering technique at a low temperature of 250 °C. The effects of the Eu_2O_3 deposited power and post-thermal annealing temperature on the PL characteristics of the Eu-doped SiOC films were investigated. It is found that the photoluminescence intensity could be enhanced by more than tenfold by increasing the Eu_2O_3 deposited power from 20W to 80W. Furthermore, very bright blue light emission can be clearly observed with the naked eye in a bright room for the Eu-doped SiOC films prepared at a Eu_2O_3 deposited power of 80 W. The improved PL intensity is attributed to the increasing number density of europium silicate clusters as a result of the increasing Eu_2O_3 deposited power as well as high annealing temperatures.
机译:通过磁控溅射技术在250°C的低温下制备Eu掺杂的SiOC薄膜。研究了Eu_2O_3的沉积功率和后热退火温度对掺Eu的SiOC薄膜PL特性的影响。发现通过将Eu_2O_3的沉积功率从20W增加到80W,可以将光致发光强度提高十倍以上。此外,对于在80 W Eu_2O_3沉积功率下制备的Eu掺杂的SiOC薄膜,可以在明亮的房间中用肉眼清楚地观察到非常明亮的蓝色发光。改进的PL强度归因于硅酸euro数量密度的增加由于Eu_2O_3沉积功率的增加以及退火温度的升高,金属团簇形成。

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