AlGaInN laser diode technology and systems for defence security applications

机译：适用于国防和安全应用的AlGaInN激光二极管技术和系统

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The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications such as underwater communications.The AlGalnN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ～380nm, to the visible ～530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGalnN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

机译：对AlGaInN激光二极管技术的最新发展进行了综述，以用于水下通信等国防和安全应用。AlGalnN材料系统允许在从uv到380nm到可见光530nm的很宽的波长范围内制造激光二极管。通过调整激光GaInN量子阱中的铟含量。因此，AlGalnN激光二极管技术是显示器，电信，国防和其他行业中新的破坏性系统级应用开发的关键推动力。

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《Conference on Laser Technology for Defense and Security》|2015年|946604.1-946604.12|共12页
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Stephen P. Najda; Piotr Perlin; Tadek Suski; Lujca Marona; Mike Bockowski; Mike Leszczynski; Przemek Wisniewski; Robert Czernecki; Robert Kucharski; Grzegorz Targowski; Scott Watson; Antony E. Kelly;
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GaN laser; GaN array; GaN systems;

机译：歌曲激光;歌曲数组;音乐系统;

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AlGaInN laser diode technology and systems for defence security applications

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