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首页> 外文会议>IEEE Symposium on VLSI Technology >Broadband THz spectroscopic imaging based on a fully-integrated 4×2 Digital-to-Impulse radiating array with a full-spectrum of 0.03–1.03THz in silicon
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Broadband THz spectroscopic imaging based on a fully-integrated 4×2 Digital-to-Impulse radiating array with a full-spectrum of 0.03–1.03THz in silicon

机译：基于完全集成的4×2数模脉冲辐射阵列的宽带THz光谱成像，硅中的全光谱为0.03–1.03THz

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摘要

This paper presents a broadband THz frequency-comb spectroscopic imager based on a fully-integrated 4×2 picosecond Direct Digital-to-Impulse (D2I) radiating array. By employing a novel trigger-based beamforming architecture, the chip performs coherent spatial combining of broadband radiated pulses and achieves an SNR>1 BW of 1.03THz (at the receiver) with a pulse peak EIRP of 30dBm. Time-domain radiation is characterized using a fsec-laser-based THz sampler and a pulse width of 5.4ps is measured. Spectroscopic imaging of metal, plastic, and cellulose capsules (empty and filled) are demonstrated. This chip achieves signal generation with an available full-spectrum of 0.03-1.03THz. The 8-element single-chip array is fabricated in a 90nm SiGe BiCMOS process.
机译：本文提出了一种基于完全集成的4×2皮秒直接数模（D2I）辐射阵列的宽带THz频梳光谱成像仪。通过采用新颖的基于触发的波束成形架构，该芯片执行宽带辐射脉冲的相干空间组合，并在30dBm的脉冲峰值EIRP处实现SNR> 1 BW（1.03THz）（在接收器处）。使用基于fsec激光的THz采样器对时域辐射进行表征，并测量5.4ps的脉冲宽度。演示了金属，塑料和纤维素胶囊（空的和填充的）的光谱成像。该芯片可在0.03-1.03THz的全频谱范围内实现信号生成。采用90nm SiGe BiCMOS工艺制造8元素单芯片阵列。

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