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Residual stress of graphene-based MEMS ICP piezoresistive pressure sensors

机译：基于石墨烯的MEMS ICP压阻式压力传感器的残余应力

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摘要

Thin diaphragm play an important role in highly sensitive MEMS piezoresistive pressure sensor for intracranial pressure measurement. The thinness of graphene was utilized in this pressure sensor to maximize the sensitivity of the ICP pressure sensor. However a very thin diaphragm can cause a pressure nonlinearity performance problem due to the residual stresses. This present paper study the effect of residual stress due to different number of graphene layers on MEMS intracranial (ICP) piezoresistive pressure sensor. COMSOL simulation was used to determine the pre-stressed deformed square diaphragm hence the value for residual stress of single layer and multilayer graphene can be calculated. It was found that the application of multilayer graphene can reduce the effect of residual stress on graphene based MEMS ICP piezoresistive pressure sensor. Residual stress of 1.94 × 107 Mpa was reduced to 9.72 × 103 Mpa by utilizing 20 layers of graphene. This study has suggested a simplified method to produced highly sensitive pressure sensor with reduced pressure non linearity problem by using multilayered graphene diaphragm instead of complicated single layer application method.
机译：薄隔膜在用于颅内压测量的高灵敏度MEMS压阻式压力传感器中起着重要作用。在该压力传感器中利用了石墨烯的薄度，以最大程度地提高ICP压力传感器的灵敏度。但是，非常薄的隔膜会由于残余应力而引起压力非线性性能问题。本文研究了由于石墨烯层数不同而产生的残余应力对MEMS颅内（ICP）压阻压力传感器的影响。 COMSOL仿真用于确定预应力变形方形隔膜，因此可以计算出单层和多层石墨烯的残余应力值。发现多层石墨烯的应用可以减少残余应力对石墨烯基MEMS ICP压阻式压力传感器的影响。通过使用20层石墨烯，残余应力从1.94×107 Mpa降低到9.72×103 Mpa。这项研究提出了一种简化的方法，该方法可通过使用多层石墨烯膜片代替复杂的单层应用方法来生产具有减压非线性问题的高灵敏度压力传感器。

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