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A Current-Source Sinusoidal Gate Driver for High-Frequency Applications

机译：用于高频应用的电流源正弦门驱动器

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摘要

This paper proposes a new single-switch gate-driver circuit to drive a low-side power transistor at high frequencies with rapid turn-ON and turn-OFF transitions. The characteristics of the proposed topology include fast dynamic response, small energy storage requirements, and flexible design. Conventional gate drivers are used up to frequencies around 5 MHz and need at least two transistors. In this study, detailed description, design procedure, and power loss analysis of the proposed topology are presented. The introduced circuit exhibits fast switching speed and low gate-drive loss. Simulation and experimental results showing performance of the new topology are provided to validate the theory. The prototype of the gate driver for power transistors is designed, simulated, and tested at 20 MHz.
机译：本文提出了一种新的单开关栅极驱动器电路，该电路可在高频下通过快速导通和关断转换来驱动低端功率晶体管。拟议拓扑的特征包括快速动态响应，较小的能量存储要求和灵活的设计。常规栅极驱动器的使用频率高达5 MHz，并且至少需要两个晶体管。在这项研究中，提出了详细的描述，设计过程和所提出的拓扑的功耗分析。引入的电路具有快速的开关速度和较低的栅极驱动损耗。仿真和实验结果表明了该新拓扑的性能，以验证该理论。用于功率晶体管的栅极驱动器的原型在20 MHz下进行设计，仿真和测试。

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