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Approach of TID-Measurements Using p-Channel MOSFETs and Its Software and Hardware Implementation

机译:使用p沟道MOSFET进行TID测量的方法及其软件和硬件实现

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In this paper a new approach of p-channel MOS-transistors using for total dose measurements during radiation tests is described and well founded. We perform the release based on microcontroller STM32 as a sensor of total ionization dose (TID). The device prototype and software were developed that realized a proposed algorithm. The prototype was experimentally tested at isotopic source.
机译:在本文中,描述并建立了一种在辐射测试期间用于总剂量测量的p沟道MOS晶体管的新方法。我们基于微控制器STM32作为总电离剂量(TID)的传感器执行释放。开发了实现所提出算法的设备原型和软件。在同位素源上对原型进行了实验测试。

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