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首页> 外文会议>International Siberian Conference on Control and Communications >Hole Mobility Model for 6H-SiC Thermoresistive Sensors Simulation
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Hole Mobility Model for 6H-SiC Thermoresistive Sensors Simulation

机译：用于6H-SiC热阻传感器仿真的空穴迁移率模型

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The modeling of low-field hole mobility in 6H silicon carbide (SiC) was carried out. Fitting coefficients for the temperature-dependent Caughey-Thomas equation and the Arora model were obtained. Experimental mobility data reported in the literature served as the basis for the model development. It was shown that Arora model is much more suitable for modeling of hole mobility in 6H-SiC in a wide range of doping concentrations and temperatures than widely used temperature-dependent Caughey-Thomas model. As far as we know, the fitting coefficients of the Arora model for hole mobility in 6H-SiC has not been reported until now. The developed mobility model was then applied to simulate a number of 6H-SiC material properties, which are critical for the design of thermoresistive sensors. Doping and temperature dependencies of resistivity and temperature coefficient of resistivity were obtained. The presented mobility model can be used in device simulators to design and optimize p-type 6H-SiC high-temperature thermoresistive sensors and other 6H-SiC devices.
机译：对6H碳化硅（SiC）中的低场空穴迁移率进行了建模。获得了与温度相关的Caughey-Thomas方程和Arora模型的拟合系数。文献中报道的实验流动性数据用作模型开发的基础。结果表明，与广泛使用的温度相关的Caughey-Thomas模型相比，Arora模型更适合于在宽范围的掺杂浓度和温度范围内对6H-SiC中的空穴迁移率进行建模。据我们所知，到目前为止尚未报道Arora模型对6H-SiC中空穴迁移率的拟合系数。然后将开发的迁移率模型应用于模拟许多6H-SiC材料特性，这对于热阻传感器的设计至关重要。获得了电阻率的掺杂和温度依赖性以及电阻率的温度系数。提出的迁移率模型可用于器件仿真器中，以设计和优化p型6H-SiC高温热阻传感器和其他6H-SiC器件。

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