首页> 外文会议>International Symposium on VLSI Technology, Systems and Application >Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with $mathrm{SS}=76mathrm{mV}/mathrm{dec}, mathrm{DIBL} =36mathrm{mV}/mathrm{V}$, and $mathrm{I}_{mathrm{on}}/mathrm{I}_{

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Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with $mathrm{SS}=76mathrm{mV}/mathrm{dec}, mathrm{DIBL} =36mathrm{mV}/mathrm{V}$, and $mathrm{I}_{mathrm{on}}/mathrm{I}_{

机译：Si通道上具有 $ mathrm {SS} = 76 mathrm {mV}的新型垂直堆叠拉伸应变Ge 0.85 Si 0.15 GAA n通道/ mathrm {dec}， mathrm {DIBL} = 36 mathrm {mV} / mathrm {V} $ 和 $ mathrm {I} _ { mathrm {on}} / mathrm {I} _ {

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The tensily strained high Ge content (85%) GeSi multi-channels stacked on the Si channel with channel size optimization have good subthreshold behaviors (SS, DIBL, and $mathrm{I}_{mathrm{off}}$), and meanwhile maintain high $mathrm{I}_{mathrm{on}}$. By narrowing GeSi channel, the bandgap of the GeSi can be increased by quantum confinement and the short channel effect can be suppressed. This also causes the more positive $mathrm{v}_{mathrm{t}}$ for GeSi than Si. As a result, $mathrm{SS}=76mathrm{mV}/mathrm{dec}, mathrm{DIBL}=36 mathrm{mV}/mathrm{V}$ can be achieved due to the benefit of superior subthreshold behaviors of the Si channel underneath. The $mathrm{I}_{mathrm{on}}/mathrm{I}_{mathrm{off}}$ is improves to be 1.2E7. The high $mathrm{I}_{mathrm{on}}=44mu mathrm{A}$ perstack at $mathrm{Vov}= mathrm{V}_{mathrm{DS}}=1mathrm{V}$, is contributed from both the GeSi and Si channels, and it is further enhanced to $46 mu mathrm{A}$ by the external strain. The relatively low flicker noise indicates that the novel structure can mitigate the reliability issue of GeSi channels by the highly reliable Si channel underneath.

机译：通过通道尺寸优化，在Si通道上堆叠的高应变应变高Ge含量（85％）GeSi多通道具有良好的亚阈值行为（SS，DIBL和 $ \ mathrm {I} _ {\ mathrm {off}} $ ），同时保持较高水平 $ \ mathrm {I} _ {\ mathrm {on}} $ 。通过使GeSi沟道变窄，可以通过量子限制来增大GeSi的带隙，并且可以抑制短沟道效应。这也导致更积极 $ \ mathrm {v} _ {\ mathrm {t}} $ 对于锗硅比硅。因此， $ \ mathrm {SS} = 76 \ mathrm {mV} / \ mathrm {dec}，\ mathrm {DIBL} = 36 \ \ mathrm {mV} / \ mathrm {V} $ 由于下面的Si沟道具有出色的亚阈值性能，因此可以实现这一点。这 $ \ mathrm {I} _ {\ mathrm {on}} / \ mathrm {I} _ {\ mathrm {off}} $ 改进为1.2E7。高 $ \ mathrm {I} _ {\ mathrm {on}} = 44 \ mu \ mathrm {A} $ 每堆 $ \ mathrm {Vov} = \ mathrm {V} _ {\ mathrm {DS}} = 1 \ mathrm {V} $ ，由GeSi和Si通道共同贡献，并进一步增强为 $ 46 \ \ mu \ mathrm { A} $ 受到外部压力的影响。相对较低的闪烁噪声表明，该新型结构可以通过下方的高度可靠的Si沟道缓解GeSi沟道的可靠性问题。

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《International Symposium on VLSI Technology, Systems and Application》|2019年|1-2|共2页
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Yu-Shiang Huang; Fang-Liang Lu; Hung-Yu Ye; Ya-Jui Tsou; Yi-Chun Liu; Chien-Te Tu; C. W. Liu;
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机译：使用 $ mathrm {ss}} = 76 mathrm {mv}上的垂直堆叠的纹状张力ge 0.85 gaa n-andlels。 / mathrm {dec}， mathrm {dibl} = 36 mathrm {mv} / mathrm {v} $ ，和 $ mathrm {i} _ { mathrm {上}} / mathrm {i} _ {
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Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with $mathrm{SS}=76mathrm{mV}/mathrm{dec}, mathrm{DIBL} =36mathrm{mV}/mathrm{V}$, and $mathrm{I}_{mathrm{on}}/mathrm{I}_{

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