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Flexible 16nJ/c.s. 134S/s 6b MIM C-2C ADC using Dual Gate Self-aligned Unipolar Metal-Oxide TFTs

机译:灵活的16nJ / c.s。使用双栅极自对准单极性金属氧化物TFT的134S / s 6b MIM C-2C ADC

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In this work a metal-oxide (Indium Gallium Zinc Oxide) 6-bit successive approximation metal-insulator-metal C2C analog to digital converter (ADC) fabricated on 15μm thick flexible substrate is demonstrated. The ADC is operated at a clock speed of 2kHz and at a power supply of 15V. The power dissipation including output buffers is 212μW at 15V and the a sampling rate of 134S/s. The ADC achieves a figure of merit (FoM) of 16.58nJ/c.s. and no missing codes using dual gate selfaligned n-type thin-film transistors on polymeric substrate.
机译:在这项工作中,展示了在15μm厚的柔性基板上制造的金属氧化物(铟镓锌氧化物)6位逐次逼近金属-绝缘体-金属C2C模数转换器(ADC)。 ADC以2kHz的时钟速度和15V的电源工作。包括输出缓冲器在内的功耗在15V时为212μW,采样率为134S / s。 ADC的品质因数(FoM)为16.58nJ / c.s。并且在聚合物基板上使用双栅极自对准n型薄膜晶体管不会丢失任何代码。

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