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A Multi-Port Dual Polarized Antenna Coupled mm-Wave CMOS Receiver with Element-level Pattern and Notch Programmability and Passive Interferer Rejection Capability

机译:多端口双极化天线耦合毫米波CMOS接收器,具有元件级模式和陷波可编程性以及无源干扰抑制能力

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Millimeter-wave based wireless communication and sensing systems for future 5G applications are expected to operate in a complex electromagnetic environment with dynamically changing near-field conditions. This is particularly true for user equipment where presence of near-field blockages and scatterers can significantly affect the front-end antenna and therefore the system performance. Classical beamforming architectures that rely on identical patterns on all elements can be extremely energy inefficient in such cases. Element-level pattern shaping that can dynamically reconfigure the properties of a single antenna can not only allow mitigation of such complex electromagnetic environment, but incorporate system properties that are distinct from classical arrays. In this work, we present a multi-port on-chip dual polarized antenna and a multi-port receiver co-design approach that allows dynamic pattern reconfiguration and element notch control that can reject interferers directly at the antenna surface before beamforming. We demonstrate this in state of the art receiver performance in a 65-nm CMOS process at 70 GHz with element maxima and notch tuning capability of more than 90° while allowing high sensitivity and minimizing impedance mismatches and power losses.
机译:预计用于未来5G应用的基于毫米波的无线通信和传感系统将在复杂的电磁环境中运行,并且动态改变近场条件。对于存在近场阻塞和散射会严重影响前端天线并因此影响系统性能的用户设备,尤其如此。在这种情况下,依赖于所有元素的相同图案的经典波束成形架构可能会导致能源效率极低。可以动态重新配置单个天线属性的元素级图案成形不仅可以缓解这种复杂的电磁环境,而且可以融合不同于传统阵列的系统属性。在这项工作中,我们提出了一种多端口片上双极化天线和一种多端口接收器协同设计方法,该方法允许动态模式重新配置和元件陷波控制,从而可以在波束成形之前直接在天线表面抑制干扰源。我们在70 GHz的65 nm CMOS工艺中以最先进的接收器性能证明了这一点,其元件最大值和陷波调谐能力超过90°,同时允许高灵敏度并最大程度地减小了阻抗失配和功率损耗。

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