A Compact 275 GHz Harmonic VCO with -2.6 dBm Output Power in a 130 nm SiGe Process

机译：在130 nm SiGe工艺中具有-2.6 dBm输出功率的紧凑型275 GHz谐波VCO

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper presents a new method for harmonic VCO design. A capacitive degeneration is employed to shape the output conductance (Gout) of the cross coupled structure to increase the possible oscillation frequency in addition to output power. An inductive feedback is utilized to provide large voltage swing at the input of the transistors to boost harmonic generation. Finally, the passive components at the collector improves the delivery of generated harmonic current to the load in addition to setting the oscillation frequency. Using this method, a 275 GHz harmonic VCO is designed and implemented in a 130 nm SiGe process. The measurement results show -2.6 dBm peak output power, 1.1% dc-to-RF efficiency, 3.3 % tuning range (270.3 GHz to 279.3 GHz). The chip area excluding the pads is 0.022 mm² which results in 25 mW/mm² power per area and 50 %/mm² efficiency per area which is highest among reported SiGe/CMOS oscillators working above 0.75 f_max.

机译：本文提出了一种新的谐波VCO设计方法。电容性退化用于对交叉耦合结构的输出电导（Gout）进行整形，以增加输出功率之外的可能的振荡频率。利用感应反馈在晶体管的输入端提供较大的电压摆幅，以增强谐波的产生。最后，除设置振荡频率外，集电极上的无源组件还改善了生成的谐波电流向负载的传递。使用这种方法，可以在130 nm SiGe工艺中设计并实现275 GHz谐波VCO。测量结果显示，峰值输出功率为-2.6 dBm，DC-RF效率为1.1％，调谐范围为3.3％（270.3 GHz至279.3 GHz）。除焊盘外的芯片面积为0.022毫米 ^{2
导致25 mW / mm
^{2
单位面积功率和50％/ mm
^{2
在0.75 f以上工作的报道的SiGe / CMOS振荡器中，单位面积的效率最高
_{max
。}}}}

著录项

来源
《IEEE Custom Integrated Circuits Conference》|2019年|1-4|共4页
会议地点
作者
Somayeh Khiyabani; Hamid Khatibi; Ehsan Afshari;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
Harmonic analysis; Voltage-controlled oscillators; Power generation; Power system harmonics; Silicon germanium; Transistors;

机译：谐波分析电压控制振荡器发电电力系统谐波硅锗晶体管;

相似文献

外文文献
中文文献
专利

1. A 200-GHz Inductively Tuned VCO With $-$7-dBm Output Power in 130-nm SiGe BiCMOS [J] . Chiang P.-Y., Momeni O., Heydari P. IEEE Transactions on Microwave Theory and Techniques . 2013,第10期

机译：在130nm SiGe BiCMOS中具有$-$ 7-dBm输出功率的200GHz电感调谐VCO
2. A 273.5–312-GHz Signal Source With 2.3 dBm Peak Output Power in a 130-nm SiGe BiCMOS Process [J] . Zhou Peigen, Chen Jixin, Yan Pinpin, Terahertz Science and Technology, IEEE Transactions on . 2020,第3期

机译：一个273.5-312-GHz信号源，具有2.3 dBm峰值输出功率的130nm SiGe BICMOS工艺
3. A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output [J] . Stefan Shopov, Andreea Balteanu, Juergen Hasch, IEEE Journal of Solid-State Circuits . 2016,第9期

机译：一个234-261-GHz 55-nm SiGe BiCMOS信号源，具有5.4-7.2 dBm的输出功率，1.3％的DC-RF效率和1GHz的分频输出
4. A Compact 275 GHz Harmonic VCO with -2.6 dBm Output Power in a 130 nm SiGe Process [C] . Somayeh Khiyabani, Hamid Khatibi, Ehsan Afshari IEEE Custom Integrated Circuits Conference . 2019

机译：紧凑型275 GHz谐波VCO，具有-2.6 dBm输出功率，130 nm SiGe过程
5. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. [D] . Baker, Bryant. 2014

机译：使用SiC HEMT器件上的GaN的3.6 GHz Doherty功率放大器，其饱和输出功率为40 dBm。
6. Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems [O] . Min-Pyo Lee, Seil Kim, Sung-June Hong, 2020

机译：适用于2.5 GHz至6 GHz干扰器系统的紧凑型20W GaN内部匹配功率放大器
7. A 200-GHz Inductively Tuned VCO With $-$7-dBm Output Power in 130-nm SiGe BiCMOS [O] . Pei-Yuan Chiang, Omeed Momeni, Payam Heydari 2013

机译：A 200-GHz电感调谐VCO $ - $ 7-DBM SIGE BICMOS中的$ 7-DBM输出功率
8. 18-GHz, 10.9-dBm Fully-Integrated Power Amplifier with 23.5% PAE in 130-nm CMOS [R] . Cao, C. , Xu, H. , Su, Y. , 2005

机译：18 GHz，10.9 dBm全集成功率放大器，130 nm CmOs中具有23.5％paE

A Compact 275 GHz Harmonic VCO with -2.6 dBm Output Power in a 130 nm SiGe Process

摘要

著录项

相似文献

相关主题

期刊订阅