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首页> 外文会议>IEEE International IOT, Electronics and Mechatronics Conference >A Radiation-Hardened Wide Spectral Response 4T CMOS Image Sensor Pixel Employing a Through-Silicon Via based Photodetector
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A Radiation-Hardened Wide Spectral Response 4T CMOS Image Sensor Pixel Employing a Through-Silicon Via based Photodetector

机译：一种辐射硬化的宽谱响应4T CMOS图像传感器像素，通过基于基于的光电探测器采用直通硅

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摘要

A novel radiation-hardened 4-transistor (4T) complementary metal-oxide-semiconductor (CMOS) image sensor pixel is proposed, employing a through-silicon-via (TSV) based metal-semiconductor-metal (MSM) photodetector as the photosensitive element. The presented pixel structure is designed and simulated in 0.18 $mu mathbf{m}$ CMOS technology. It is shown that deploying the TSV-based MSM photodetector decreases the pixel sensitive area to 3 $mu mathbf{m}^{2}$ compared to conventional planar MSM ones, and enhances both the lower and higher wavelengths of the spectral response characteristic of the pixel as well. The designed pixel has a 2.75 $mu mathbf{m}$ radius circular structure, the dark current of 77 fA at 1 V reverse bias (at room temperature), a conversion gain of 116 $mu mathbf{V.e}^{-1}$, a dynamic range of 58.62 dB, and an approximately linear spectral response in the range of 300 to 800 nm wavelengths of the incident light spectrum. The proposed pixel structure, enabled with a p+ guard ring, also demonstrates insignificant dark current degradation under gamma ray radiation of up to 1 Mrad.
机译：提出了一种新颖的辐射硬化的4晶体管（4T）互补金属氧化物 - 半导体（CMOS）图像传感器像素，采用基于硅通孔（TSV）的金属半导体 - 金属（MSM）光电探测器作为光敏元件。所示的像素结构设计和模拟0.18 $ mu mathbf {m $ CMOS技术。结果表明，部署基于TSV的MSM光电探测器将像素敏感区域减少到3 $ mu mathbf {m } ^ {2} $ 与传统的平面MSM组相比，并增强了像素的光谱响应特性的较低波长和更高波长。设计的像素有2.75 $ mu mathbf {m $ 半径圆形结构，77 FA的暗电流为1 V反向偏置（室温），转换增益为116 $ mu mathbf {ve } ^ { - 1} $ ，动态范围为58.62dB，以及在入射光光谱的300至800nm波长的范围内的近似线性光谱响应。所提出的像素结构，使能P +保护环，还在伽马射线辐射下显示出高达1mRad的微小电流降解。

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