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Effects of high energy neutrons and resulting secondary charged particles on the operation of MOSFETs

机译：高能中子及其产生的次级带电粒子对MOSFET工作的影响

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Study for penetration of nuclear radiation into semiconductor materials had been of theoretical interest and of practical important in these recent years, driven by the scaling down of semiconductor materials. This paper reviews the typical effects occurring in the operation of MOSFETs due to irradiation with neutrons resulting from Deuterium-Tritium (D-T) reaction. Charge trapping features of MOSFETs were investigated by in situ irradiation and post irradiation methods. Analytical explanations and calculations on the numeric change that occurs in the MOSFETs were conducted using a series of simulations. The oxide insulating layer of MOSFET is found to be most sensitive to the neutron radiation. Energy deposition of neutrons in MOSFET occurs via two mechanisms; firstly by trapped charge buildup in the silicon dioxide (SiO) layer and secondly, an increase in the density of trapping states at the SiO interface. The bombardment of neutron in the MOSFET model produces at least three secondary particles, which are alpha (α) particles, proton (p) particles and silicon recoil atoms, through the reactions of (n,α), (n,p) and neutron scattering respectively. Damage efficiencies of these secondary particles are discussed in direct comparisons.
机译：近年来，在半导体材料的缩小规模的推动下，将核辐射渗透到半导体材料中的研究具有理论意义和实际意义。本文回顾了由于氘-rit（D-T）反应引起的中子辐照而在MOSFET的工作中产生的典型效应。通过原位辐照和后辐照方法研究了MOSFET的电荷俘获特性。使用一系列模拟对MOSFET中发生的数字变化进行了分析说明和计算。发现MOSFET的氧化物绝缘层对中子辐射最敏感。 MOSFET中中子的能量沉积是通过两种机制发生的：首先，通过在二氧化硅（SiO）层中捕获电荷积累，其次，增加了SiO界面处的捕获态密度。 MOSFET模型中的中子轰击通过（n，α），（n，p）和中子的反应产生至少三个次级粒子，分别是α（α）粒子，质子（p）粒子和硅反冲原子。分别散射。在直接比较中讨论了这些次级粒子的破坏效率。

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