Electrically alterable read-only memory cell with graded energy band-gap insulator

机译：具有梯度能带隙绝缘体的电可变只读存储单元

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Low voltage alterability and excellent memory retention have been obtained with a novel EAROM cell that has a graded energy band-gap film as the first insulator of a Floating-Gate type memory. The graded energy band-gap insulator can enhance charge injection without deteriorating memory retention, because the energy band-gap is narrowed only at the silicon substrate interface. A graded energy band-gap insulator has been realized by thermally oxidizing the surface of a very thin silicon nitride film grown by direct thermal nitridation of a silicon substrate. A fabricated EAROM cell has shown that it can be programmed by a single positive supply of less than 12 V and it has excellent memory retention.

机译：用具有梯度能带隙膜的新型EAROM单元作为浮栅型存储器的第一绝缘体已经获得了低电压可变性和优异的存储器保持性。梯度能带隙绝缘体可以增强电荷注入，而不会降低存储能力，因为能带隙仅在硅衬底界面处变窄。通过热氧化通过硅衬底的直接热氮化而生长的非常薄的氮化硅膜的表面，已经实现了梯度能带隙绝缘体。制成的EAROM单元表明，可以通过低于12 V的单正电源对其进行编程，并且具有出色的存储保持力。

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《Electron Devices Meeting, 1980 International》||p.590-593|共4页
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Hijiya S.; Ito T.; Nakamura T.; Toyokura N.; Ishikawa H.;
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1. A new memory element based on silicon nanoclusters in a ZrO2 insulator with a high permittivity for electrically erasable read-only memory [J] . Gritsenko VA, Nasyrov KA, Gritsenko DV, Semiconductors . 2005,第6期

机译：一种新型的基于ZrO2绝缘体中硅纳米簇的高介电常数存储元件，用于电可擦只读存储器
2. Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory [J] . Makoto Mizukami, Kiyohito Nishihara, Hirokazu Ishida, Japanese journal of applied physics . 2010,第4issue2期

机译：用于2×nm世代浮栅NAND电可擦可编程只读存储器的部分绝缘体上硅衬底上的耗尽型单元晶体管
3. Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells [J] . Rodbell K. P., Heidel D. F., Tang H. H. K., IEEE Transactions on Nuclear Science . 2007,第6期

机译：65 nm节点，绝缘体上硅，锁存器和存储单元中的低能质子诱导的单事件扰动
4. Electrically alterable hot-electron injection floating gate MOS memory cell with series enhancement [C] . Guterman D.C., Rimawi I.H., Halvorson R.D., Electron Devices Meeting, 1978 International . -1

机译：具有串联增强功能的电可变热电子注入浮栅MOS存储单元
5. Hot-carrier effects in flash erasable programmable read-only memory devices. [D] . San, Kemal Tamer. 1994

机译：闪存可擦可编程只读存储设备中的热载流子效应。
6. PdO DopingTunes Band-Gap Energy Levels as Well asOxidative Stress Responses to a Co3O4p-Type Semiconductor in Cells and the Lung [O] . Haiyuan Zhang, ◊, Suman Pokhrel, -1

机译：钯掺杂调整带隙能级以及细胞和肺对Co3O4p型半导体的氧化应激反应
7. Flexible thermo-electrochemical cells using Iodolyte HI-30 for conversion of low-grade heat to electrical energy [O] . Zubair Ahmad, Jolly Bhadra, Farid Touati, 2016

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8. Military Adaptation of Commercial Item (MACI) Program on Electrically Alterable Read Only Memory (EAROM) [R] . Wiker, R. L., Carter, R. W., Mattox, J. 1980

机译：电子可变只读存储器（EaROm）的商业项目（maCI）程序的军事适应

Electrically alterable read-only memory cell with graded energy band-gap insulator

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