A paste containing molybdenum (Mo) and titanium nitride (TiN)powders was printed on aluminium nitride (AlN) substrates and fired. Theadhesive strength of substrates metallized with Ni/Au plate was about 25kg/2.5 mm2 and was unchanged after a thermal cycle test.TiN-Mo does not adhere to the grain boundary phase of the AlN substratenor to the surface oxide layer but to the AlN grain itself. This method,therefore, seems to be applicable to any kind of AlN substrate, whichcan have different grain boundary oxide phases and thermalconductivities. This TiN-Mo metallized AlN substrate replaced aberyllium oxide (BeO) heat sink, which has been used for RF powertransistors. There was no trouble in assembling the AlN heat sinks intotransistors. Thermal resistance and electrical properties of transistorswith AlN heat sinks were almost equal to those of transistors with BeOheat sinks
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机译：包含钼（Mo）和氮化钛（TiN）的浆料
将粉末印刷在氮化铝（AlN）基材上并烧制。这
Ni / Au板金属化的基材的粘合强度约为25
kg / 2.5 mm 2 ，并且在热循环测试后保持不变。
TiN-Mo不附着在AlN衬底的晶界相上
也不是表面氧化物层，而是AlN晶粒本身。这种方法
因此，似乎适用于任何种类的AlN衬底，
可以具有不同的晶界氧化物相和热
电导率。该TiN-Mo金属化AlN衬底替代了
氧化铍（BeO）散热器，已用于RF功率
晶体管。将AlN散热器组装到
晶体管。晶体管的热阻和电性能
AlN散热片几乎与BeO晶体管相同
散热片
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