Nearly degenerate four-wave mixing (NDFWM) in semiconductor lasers has been studied extensively. As we will demonstrate, the frequency dependence of FWM signals can be used to extract the intrinsic AlGaAs-GaAs semiconductor laser parameters since the FWM process is free of electrical parasitic effects. Through a quantitative fit to the NDFWM data, we were able to extract some basic semiconductor laser parameters, including the relaxation oscillation frequency, damping rate, nonlinear gain parameter, linewidth enhancement factor and optical confinement factor.
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