In this paper we propose a new technique based on tapering of the waveguide layer along the cavity by Shadow Masked Growth (SMG), which yields low threshold lasers with a narrow farfield. Due to the diffusion limited MOVPE growth process the growth velocity V/sub gr/ on the substrate depends on the width of the channel W and the thickness H of the spacerlayer. The velocity will decrease with decreasing width W and increasing thickness H and vice versa. This makes it possible to change the thickness of the layer at predefined places on the substrate by varying the width of the channel. The prepatterned substrates are defined by lithography and wet etching.
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机译：在本文中，我们提出了一种基于横梁屏蔽生长（SMG）沿着腔的波导层逐渐变细的新技术，这产生了具有窄法场的低阈值激光器。由于扩散有限的MOVPE生长过程，生长速度V / SUB GR /基板上的基板取决于通道W的宽度和间隔叶层的厚度H.速度将减小宽度W和增加厚度H，反之亦然。这使得可以通过改变通道的宽度来改变在衬底上的预定位置处的层的厚度。备用基板由光刻和湿法蚀刻定义。
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