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Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing

机译:掩埋异质结构表面发射使用集成真空处理制造的激光二极管

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In this paper, we describe an in-situ process in which etching and regrowth are performed in controlled vacuum environments without exposing samples to air. The etching includes electron cyclotron resonance (ECR) plasma H/sub 2/ to remove the native oxides, ECR SiCl/sub 4/ to etch anisotropically, and/or a brief Cl/sub 2/ chemical etch to remove any near surface damage. Solid-source molecular beam epitaxy (MBE) is used for regrowth. We have applied this in-situ all vacuum processing to the fabrication of buried heterostructure vertical cavity surface emitting laser diodes.
机译:在本文中,我们描述了一种原位过程,其中在受控真空环境中进行蚀刻和再生,而不将样品暴露在空气中。蚀刻包括电子回旋谐振(ECR)等离子体H / SUP 2 /以除去天然氧化物,ECR SICL / SUB 4 /以蚀刻各向异性,和/或简要的CL / SUB 2 /化学蚀刻以除去任何接近表面损坏。固体源分子束外延(MBE)用于再生。我们已经将这种原位的所有真空处理应用于掩埋异质结构垂直腔表面发射激光二极管的制造。

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