Chemical beam epitaxy (CBE) continues to make very important advances in large-area material uniformity, process control, new precursors and device applications. The performance of CBE-prepared devices, electronic and opto-electronic, is among the best state-of-the-art and in some cases the best in their areas, such as long wavelength multi-quantum well InGaAsP/InP DFB lasers, 0.98 /spl mu/m GaAs/GaInP lasers, carbon-doped base GaAs/GaInP HBTs and InGaAs/InP HBTs and circuits.
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机译：化学束外延（CBE）继续在大面积材料均匀性，过程控制，新前兆和器件应用中进行非常重要的进步。 CBE制备的设备，电子和光电的性能，是最先进的，在某些情况下，其领域中最好的，如长波长多量子井InGaASP / InP DFB激光器，0.98 / SPL MU / M GAAS / GAINP激光器，碳掺杂基础GAAS / GABTP HBT和INGAAS / INP HBT和电路。
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